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Same model may have multiple batches, images only for reference.
PJW5N10_R2_00001 Real Image
Same model may have multiple batches, images only for reference.

PJW5N10_R2_00001

Part No PJW5N10_R2_00001
Manufacturer Panjit
Catalog Transistors - FETs, MOSFETs - RF
Description 100V N-CHANNEL ENHANCEMENT MODE / N-Channel 100 V 3.1A (Ta), 5A (Tc) 3.1W (Ta) Surface Mount SOT-223
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Panjit International Inc.
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 3.1A (Ta), 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 130mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 707 pF @ 30 V
Power Dissipation (Max) 3.1W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package SOT-223
Package / Case TO-261-4, TO-261AA
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 3757-PJW5N10_R2_00001CT,3757-PJW5N10_R2_00001TR,3757-PJW5N10_R2_00001DKR
Standard Package 2,500
Win Source Part Number 1085352-PJW5N10_R2_00001
Ultra Librarian 3D Model Ultra Librarian PJW5N10_R2_00001 CAD Model

Description

The Panjit PJW5N10_R2_00001 is an N-channel MOSFET transistor designed for general-purpose applications.

  • Maximum Drain to Source Voltage: 100V
  • Continuous Drain Current: 3.1A (Ta), 5A (Tc)
  • Maximum Rds on: 130mOhm @ 2.5A, 10V
  • Gate Charge: 12 nC @ 10V
  • Input Capacitance: 707 pF @ 30V
  • Operating Temperature: -55°C to 150°C (TJ)
  • ECCN: EAR99
  • Package: TO-261-4, TO-261AA
  • Mounting: SMD (SMT) technology
  • Packaging: tape and reel packaging
  • Standard Package: 2,500 units

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