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Same model may have multiple batches, images only for reference.
PJW3N10A_R2_00001 Real Image
Same model may have multiple batches, images only for reference.

PJW3N10A_R2_00001

Part No PJW3N10A_R2_00001
Manufacturer Panjit
Catalog Transistors - FETs, MOSFETs - RF
Description 100V N-CHANNEL ENHANCEMENT MODE / N-Channel 100 V 2.2A (Ta) 3.1W (Ta) Surface Mount SOT-223
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Panjit International Inc.
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 310mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.1 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 508 pF @ 30 V
Power Dissipation (Max) 3.1W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package SOT-223
Package / Case TO-261-4, TO-261AA
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 3757-PJW3N10A_R2_00001CT,3757-PJW3N10A_R2_00001TR,3757-PJW3N10A_R2_00001DKR
Standard Package 2,500
Win Source Part Number 1085353-PJW3N10A_R2_00001
Ultra Librarian 3D Model Ultra Librarian PJW3N10A_R2_00001 CAD Model

Description

The PJW3N10A_R2_00001 is a MOSFET transistor manufactured by Panjit International Inc.

  • Supply and Demand Status: unlimited
  • Package: tape and reel
  • Win Source Part Number: 1085353-PJW3N10A_R2_00001
  • Drain to Source Voltage (Vdss): 100 V
  • Maximum Power Dissipation: 3.1W (Ta)
  • Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V

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