The 1SS417FN2 is a high-speed switching diode manufactured by Panjit. This diode is designed for applications requiring fast switching speeds and low capacitance. It's commonly used in various electronic circuits for signal detection, rectification, and protection.

Applications

• High-Speed Switching: Used in circuits where rapid switching is required, such as in digital circuits and high-frequency applications.
• Signal Detection: Employed in signal detection circuits for detecting weak signals.
• Rectification: Used as a rectifier in low-power AC-DC converters.
• Protection Circuits: Used for protecting sensitive electronic components from voltage spikes and overcurrent conditions.

Features

• Fast Reverse Recovery Time: Enables rapid switching performance.
• Low Capacitance: Minimizes signal distortion and improves high-frequency performance.
• Small Package Size: Allows for compact circuit designs.
• High Forward Current: Supports relatively high forward current.

Benefits

• Efficient Switching: Fast reverse recovery time ensures efficient switching behavior.
• Improved Signal Integrity: Low capacitance minimizes signal distortion in high-frequency applications.
• Compact Design: Small package allows for integration in space-constrained applications.
• Reliable Protection: Protects components from damage due to voltage and current surges.

Additional Details

Absolute Maximum Ratings:

• Peak Reverse Voltage (VRM): 85 V
• Forward Current (IF): 100 mA
• Peak Forward Surge Current (IFSM): 1 A
• Power Dissipation (PD): 200 mW
• Junction Temperature (Tj): 125 °C
• Storage Temperature (Tstg): -55 to +150 °C

Electrical Characteristics (at Ta = 25°C):

• Forward Voltage (VF): 1.2 V (max) at IF = 100 mA
• Reverse Current (IR): 1 µA (max) at VR = 80 V
• Reverse Recovery Time (trr): 4 ns (typ) at IF = 10 mA, VR = 6 V
• Total Capacitance (CT): 4 pF (typ) at VR = 0 V, f = 1 MHz