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2SB1299

Part No 2SB1299
Manufacturer Panasonic
Catalog Custom Parts (0 - A)
Sample
Rohs State Need to verify
ECAD Module
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Win Source Part Number 1143808-2SB1299
Categories Custom Parts
Manufacturer Panasonic
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SB1299 CAD Model

Description

The 2SB1299 is a silicon PNP epitaxial planar transistor manufactured by Panasonic. This transistor is designed for use in low-frequency power amplifier applications. It features a low saturation voltage, enabling efficient operation in various circuits. The 2SB1299 is commonly used in audio amplifiers and power supplies.

Applications

  • Audio Amplifiers: Used in pre-amplifiers and power amplifiers to boost audio signals.
  • Power Supplies: Used as a switching element in linear power supplies.
  • Motor Control Circuits: Can be implemented in simple motor control applications.
  • General Purpose Switching: Used for switching applications in electronic circuits.

Features

  • PNP Silicon Epitaxial Planar Transistor: Ensures reliable performance and consistent characteristics.
  • Low Saturation Voltage: Reduces power dissipation and improves efficiency.
  • High Collector Current: Offers flexibility for various circuit designs.
  • High Power Dissipation: Allows for use in applications with moderate power requirements.

Benefits

  • Enhanced Audio Quality: Low saturation voltage ensures minimal distortion in audio amplifier circuits.
  • Improved Power Efficiency: Low saturation voltage reduces power losses, leading to efficient performance.
  • Reliable Performance: The PNP silicon structure ensures stable and consistent operation.
  • Versatile Applications: Suitable for a wide range of applications, from audio amplification to power regulation.

Additional Details

The 2SB1299 has a collector-base voltage (VCBO) of -60V, a collector-emitter voltage (VCEO) of -50V, and an emitter-base voltage (VEBO) of -5V. The collector current (IC) is rated at -3A, and the power dissipation (PC) is 1.5W. Its hFE is typically around 100-320 at Ic=-1A. It is typically supplied in a TO-126 package. Ensure proper heat sinking when using this transistor at high power levels.

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