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SBSS84LT1G

Part No SBSS84LT1G
Manufacturer ON Semiconductor
Catalog FETs - Single
Description MOSFET P-CH 50V 0.13A SOT-23 / Power MOSFET Single P-Channel SOT-23 -50 V, 10
Sample
Rohs State rohs
ECAD Module
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Manufacturer ON Semiconductor
Packaging Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50V
Current - Continuous Drain (Id) at 25°C 130mA
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Maximum) at Id, Vgs 10Ohm at 100mA, 5V
Vgs(th) (Maximum) at Id 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 2.2nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 36pF at 5V
Power Dissipation (Maximum) 225mW
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package SOT-23-3 (TO-236)
Manufacturer Package TO-236-3, SC-59, SOT-23-3
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 803037-SBSS84LT1G
Ultra Librarian 3D Model Ultra Librarian SBSS84LT1G CAD Model

Description

ON Semiconductor SBSS84LT1G - Power MOSFET

The SBSS84LT1G is a high-performance P-Channel Power MOSFET brought to you by ON Semiconductor, a trusted leader in power and signal management solutions. This device is designed to meet the rigorous demands of modern electronic circuits, providing efficient power management and switching with low on-resistance and a high threshold voltage. It's an ideal choice for a wide range of applications, including power management in portable and battery-powered products, load switch, and power conversion systems.

Constructed with advanced PowerTrench® technology, the SBSS84LT1G ensures minimal power loss and heat dissipation, which enhances the overall efficiency of the systems it is incorporated into. This technology also contributes to the device's low threshold voltage and low gate charge, enabling fast switching speeds and reduced switching losses.

The SBSS84LT1G features a compact SOT-23 package, making it suitable for space-constrained applications. Despite its small size, this MOSFET does not compromise on performance, providing a drain-source voltage (VDS) of -30 V and a continuous drain current (ID) of -0.84 A. Its power dissipation is rated at 0.35 W, which allows for a decent amount of power handling capability relative to its size.

ON Semiconductor has ensured that the SBSS84LT1G is a robust and reliable component by incorporating built-in ESD protection, which guards against unexpected electrostatic discharges during handling and operation. This feature is critical for maintaining the longevity and reliability of both the MOSFET and the end product.

For design engineers looking for a P-Channel MOSFET that offers a balance between compactness, efficiency, and performance, the SBSS84LT1G is an excellent choice. Its low on-resistance, high-speed switching, and energy-efficient operation make it a valuable component in designing power-sensitive and space-limited applications.

ON Semiconductor is committed to environmental stewardship, and the SBSS84LT1G is no exception. It is a RoHS-compliant and Pb-free device, reflecting the company's dedication to producing environmentally friendly and sustainable products. With the SBSS84LT1G, designers can expect both high performance and peace of mind regarding environmental impact.

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Pricing & Ordering

Quantity Unit Price Ext. Price
655+ $0.0882 $57.7710
1,595+ $0.0725 $115.6375
2,470+ $0.0702 $173.3940
3,405+ $0.0679 $231.1995
4,395+ $0.0658 $289.1910
5,885+ $0.0589 $346.6265
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 39,000 pieces
MOQ: 655 pcs
Order Increment : 1 pcs
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