ON Semiconductor SBC846BPDW Bipolar Transistor
The ON Semiconductor SBC846BPDW is a high-performance bipolar (BJT) transistor designed for a wide range of applications. This NPN transistor is known for its robustness and efficiency, making it an ideal choice for electronic enthusiasts and professionals alike. It's commonly used in amplification and switching applications, where reliable and consistent performance is crucial.
Key Features:
- High Current Gain: The SBC846BPDW offers high current gain (hFE), which is essential for applications requiring signal amplification.
- Low Voltage Operation: It operates at low voltages, making it suitable for battery-powered devices and low power circuits.
- Complementary PNP Type: This NPN transistor has a complementary PNP type available, allowing for flexibility in designing push-pull configurations and other complementary pair applications.
- Package: Housed in a compact SOT-363 package, it takes up minimal space on a PCB, which is beneficial for space-constrained applications.
- Temperature Tolerance: With an operating temperature range from -55°C to +150°C, the SBC846BPDW can withstand harsh thermal environments.
Applications:
The versatility of the SBC846BPDW makes it suitable for a variety of applications, including:
- Audio Amplifiers
- Signal Processing
- Power Management
- Switching Circuits
- Driver Stages in Hi-Fi Amplifiers
- Consumer Electronics
Technical Specifications:
| Parameter |
Value |
| Collector-Emitter Voltage (Vceo) |
65V |
| Collector-Base Voltage (Vcbo) |
80V |
| Emitter-Base Voltage (Vebo) |
6V |
| Collector Current (Ic) |
100mA |
| Power Dissipation (Pd) |
225mW |
| DC Current Gain (hFE) |
120 to 560 |
The ON Semiconductor SBC846BPDW is a reliable and efficient solution for your circuit design needs, delivering high performance in a compact form factor.