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NTMD6N02R2

Part No NTMD6N02R2
Manufacturer ON Semiconductor
Catalog FETs - Arrays
Description MOSFET 2N-CH 20V 3.92A 8SO
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr ON Semiconductor
Package Tape & Reel
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3.92A
Rds On (Max) @ Id, Vgs 35mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 16V
Power - Max 730mW
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Base Product Number NTMD6
Standard Package 2,500 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 649850-NTMD6N02R2
Ultra Librarian 3D Model Ultra Librarian NTMD6N02R2 CAD Model

Description

The ON Semiconductor NTMD6N02R2 is a high-performance Power MOSFET designed for a broad range of applications. It's engineered to meet the rigorous demands of power regulation tasks in modern electronic devices. This MOSFET is a testament to ON Semiconductor's commitment to providing energy-efficient, reliable, and cost-effective semiconductor solutions.

Key Features

  • Low RDS(on): The device features a low on-state resistance, which translates to reduced power losses and improved efficiency during operation.
  • High Current Capacity: With the ability to handle significant current levels, the NTMD6N02R2 is suitable for high-power applications.
  • Thermal Management: Enhanced thermal performance ensures the MOSFET operates reliably over a wide temperature range.
  • Dual P-Channel: The dual P-Channel configuration allows for compact circuit designs and simplifies the creation of complementary circuits when paired with an N-Channel MOSFET.

Applications

The NTMD6N02R2 is versatile and can be used in various applications, including:

  • Power management for portable electronics
  • DC/DC converters
  • Load switch applications
  • Motor control circuits

Specifications

Parameter Value
VDS (Drain-Source Voltage) 20V
ID (Continuous Drain Current) 6.7A
Power Dissipation 2.5W
Package SOIC-8

Quality and Environmental Compliance

ON Semiconductor ensures that the NTMD6N02R2 meets stringent quality standards. The device is compliant with RoHS directives, indicating that it is manufactured without the use of hazardous substances.

Conclusion

The NTMD6N02R2 from ON Semiconductor is an ideal choice for designers looking for a robust Power MOSFET with high efficiency, reliability, and thermal performance. Its broad applicability makes it an essential component in the toolkit of any electronic designer focused on power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.7082 $60.1970
200+ $0.5811 $116.2200
310+ $0.5629 $174.4990
425+ $0.5449 $231.5825
550+ $0.5266 $289.6300
735+ $0.4722 $347.0670
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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