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NTMD6601NR2G

Part No NTMD6601NR2G
Manufacturer ON Semiconductor
Catalog FETs - Arrays
Description MOSFET 2N-CH 80V 1.1A 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr ON Semiconductor
Package Tape & Reel
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 1.1A
Rds On (Max) @ Id, Vgs 215mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V
Power - Max 600mW
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Base Product Number NTMD66
Standard Package 2,500 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 649849-NTMD6601NR2G
Ultra Librarian 3D Model Ultra Librarian NTMD6601NR2G CAD Model

Description

The ON Semiconductor NTMD6601NR2G is a high-performance, dual N-Channel Power MOSFET designed to deliver efficient power management and switching. This compact semiconductor device is engineered to address the demanding requirements of modern electronic circuits, providing a combination of low on-resistance, high-speed switching, and low gate charge.

Key Features

  • Low On-Resistance: The NTMD6601NR2G features an exceptionally low on-resistance, which translates to reduced power loss and improved overall efficiency in applications.
  • Dual N-Channel Configuration: Its dual N-Channel setup allows for flexibility in design, enabling the use of a single component instead of multiple transistors, saving space and simplifying circuit complexity.
  • High-Speed Switching: Designed for fast switching applications, this MOSFET can operate at higher frequencies, which is essential for power supplies, DC-DC converters, and other power management tasks.
  • Low Gate Charge: The low gate charge characteristic ensures minimal power is required to switch the device on and off, contributing to the overall energy efficiency of the system.
  • Power-Saving: With its energy-efficient operation, the NTMD6601NR2G is suitable for battery-powered devices, helping to extend operational life and reduce the environmental impact.
  • Compact Surface-Mount Package: The device comes in a small surface-mount package, making it ideal for space-constrained applications.

Applications

The ON Semiconductor NTMD6601NR2G is versatile and can be used in a wide range of applications, including:

  • Power Management Modules
  • DC-DC Converters
  • Battery-Powered Systems
  • Motor Control Circuits
  • Load Switching
  • Computing and Networking Systems

Technical Specifications

  • Voltage Rating: The device supports a drain-source voltage (V<sub>DS) of up to 30V.
  • Current Rating: It can handle a continuous drain current (I<sub>D) of up to 7.5A.
  • Thermal Performance: The NTMD6601NR2G is designed to maintain stable operation with excellent thermal characteristics.

Overall, the NTMD6601NR2G from ON Semiconductor is a reliable and efficient solution for designers looking to optimize their power management systems with a high-quality, dual N-Channel MOSFET.

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.7320 $58.5600
195+ $0.6008 $117.1560
300+ $0.5819 $174.5700
415+ $0.5632 $233.7280
535+ $0.5444 $291.2540
710+ $0.4881 $346.5510
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,000 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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