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NTJD4401NT1

Part No NTJD4401NT1
Manufacturer ON Semiconductor
Catalog FETs - Arrays
Description MOSFET 2N-CH 20V 0.63A SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr ON Semiconductor
Package Tape & Reel
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 630mA
Rds On (Max) @ Id, Vgs 375mOhm @ 630mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 46pF @ 20V
Power - Max 270mW
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363
Base Product Number NTJD4401
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 649831-NTJD4401NT1
Ultra Librarian 3D Model Ultra Librarian NTJD4401NT1 CAD Model

Description

ON Semiconductor NTJD4401NT1 Dual P-Channel Power MOSFET

The NTJD4401NT1 is a high-performance dual P-Channel Power MOSFET from ON Semiconductor, designed to deliver efficient power management and switching capabilities in a compact package. This product is tailored for applications that require low voltage operation and power conservation, making it an ideal choice for portable and battery-powered devices, as well as for general-purpose power switching tasks.

Key Features

  • Low On-Resistance: The NTJD4401NT1 features a low on-resistance, which minimizes power loss and improves overall efficiency during operation.
  • Dual P-Channel: Its dual P-Channel configuration allows for the control of two separate circuits within a single package, saving space and reducing component count in a circuit design.
  • Compact Footprint: Housed in a small 6-pin TSOP package, the device is suitable for space-constrained applications, while providing robust performance.
  • Low Threshold Voltage: The low threshold voltage ensures that the MOSFET can be driven at lower gate voltages, making it compatible with low-voltage logic levels.
  • High-Speed Switching: With its capability for high-speed switching, the NTJD4401NT1 is well-suited for high-frequency applications, contributing to efficient power conversion and regulation.

Applications

  • Power Management in Portable Devices
  • Battery Powered Systems
  • Load/Power Switching
  • DC/DC Converters
  • Charge and Discharge Switches for Battery Protection

The NTJD4401NT1 from ON Semiconductor is a testament to the company's commitment to providing innovative solutions for power management challenges. Its combination of efficiency, space-saving design, and high-speed operation makes it a versatile component for a wide range of electronic devices. Whether for consumer electronics, mobile devices, or industrial applications, the NTJD4401NT1 is engineered to meet the demands of modern circuit design.

Environmental and Quality Certifications

ON Semiconductor ensures that the NTJD4401NT1 meets rigorous environmental and quality standards, including RoHS compliance and Pb-Free construction, reflecting the company's dedication to environmental responsibility and product reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.6052 $60.5200
235+ $0.4967 $116.7245
360+ $0.4816 $173.3760
500+ $0.4655 $232.7500
645+ $0.4505 $290.5725
860+ $0.4043 $347.6980
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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