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Same model may have multiple batches, images only for reference.
IRF7104PBF Real Image
Same model may have multiple batches, images only for reference.

IRF7104PBF

Part No IRF7104PBF
Manufacturer Infineon Technologies
Catalog FETs - Arrays
Description HEXFET Power MOSFET | MOSFET 2P-CH 20V 2.3A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Transistor Polarity 2 P-Channel (Dual)
FET Feature Logic Level Gate
Vds - Drain-Source Breakdown Voltage 20V
Id - Continuous Drain Current 2.3A
Rds On (Maximum) at Id, Vgs 250mOhm at 1A, 10V
Gate Source Voltage(th) (Maximum) at Id 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 25nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds 290pF at 15V
Maximum Power 2W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package 8-SOIC
Supplier Device Package 8-SO
Family Part Number IRF7104PBF
Manufacturer Pack Quantity 3,800
MSL Level 1 (Unlimited)
Win Source Part Number 1187164-IRF7104PBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF7104PBF CAD Model

Description

The Infineon Technologies IRF7104PBF is a dual P-channel MOSFET transistor with a maximum power of 2W and a maximum drain-source breakdown voltage of 20V.

  • Continuous Drain Current: 2.3A
  • Rds On (maximum) @ Id, Vgs: 250mOhm @ 1A, 10V
  • Gate-Source Voltage(th) (maximum) @ Id: 3V @ 250μA
  • Gate Charge (Qg) (maximum) @ Vgs: 25nC @ 10V
  • Package: 8-SO
  • Status: Obsolete
  • Supply and Demand Status: Limited

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