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Same model may have multiple batches, images only for reference.
IRF7910PBF Real Image
Same model may have multiple batches, images only for reference.

IRF7910PBF

Part No IRF7910PBF
Manufacturer Infineon Technologies
Catalog FETs - Arrays
Description HEXFET Power MOSFET | MOSFET 2N-CH 12V 10A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Transistor Polarity 2 N-Channel (Dual)
FET Feature Logic Level Gate
Vds - Drain-Source Breakdown Voltage 12V
Id - Continuous Drain Current 10A
Rds On (Maximum) at Id, Vgs 15mOhm at 8A, 4.5V
Gate Source Voltage(th) (Maximum) at Id 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 26nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds 1730pF at 6V
Maximum Power 2W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package 8-SOIC
Supplier Device Package 8-SO
Family Part Number IRF7910PBF
Manufacturer Pack Quantity 3,800
MSL Level 1 (Unlimited)
Win Source Part Number 1187381-IRF7910PBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF7910PBF CAD Model

Description

The Infineon Technologies 1187381-IRF7910PBF is a dual N-channel MOSFET transistor with a drain-source breakdown voltage of 12V and a continuous drain current of 10A.

  • Channel Type: Dual N-channel
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current: 10A
  • Gate: Logic level gate
  • Maximum Gate-Source Voltage: 2V @ 250μA
  • Maximum Power: 2W
  • Maximum On-Resistance: 15mOhm @ 8A, 4.5V
  • Input Capacitance: 1730pF @ 6V
  • Gate Charge: 26nC @ 4.5V
  • Package: 8-SOIC
  • Application: Suitable for use in discrete semiconductor products

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200+ $0.5006 $100.1200
315+ $0.4837 $152.3655
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