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NGTB20N120LWG

Part No NGTB20N120LWG
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description Incorporated into the device is a rugged co−packaged free wheeling diode with a low forward voltage.
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Part Status Obsolete(EOL)
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Maximum) 1200V
Current - Collector (Ic) (Maximum) 40A
Current - Collector Pulsed (Icm) 200A
Vce(on) (Maximum) @ Vge, Ic 2.2V @ 15V, 20A
Power - Max 192W
Switching Energy 3.1mJ (on), 700μJ (off)
Input Type Standard
Gate Charge 200nC
Td (on/off) @ 25°C 86ns/235ns
Test Condition 600V, 20A, 10 Ohm, 15V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-247-3
Manufacturer Package TO-247
Win Source Part Number 1231147-NGTB20N120LWG
Manufacturer Homepage www.onsemi.com
Popularity Medium
Supply and Demand Status Limited
Family Name NGTB20N120LWG
Introduction Date May 02, 2012
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian NGTB20N120LWG CAD Model

Description

ON Semiconductor NGTB20N120LWG IGBT

The ON Semiconductor NGTB20N120LWG is a high-performance Insulated Gate Bipolar Transistor (IGBT) that is designed for a wide range of power applications. This IGBT combines the best features of both MOSFETs and bipolar transistors, offering superior efficiency, fast switching, and high current capabilities. It is an ideal choice for applications that require robust performance in a compact package.

Key Features

  • High Current Rating: The NGTB20N120LWG is capable of handling continuous collector currents up to 40A, making it suitable for high-power applications.
  • High Voltage Capability: With a collector-emitter voltage (VCE) of 1200V, this IGBT can be used in circuits that experience high voltage stress.
  • Low On-State Voltage: The device exhibits a low VCE(on) which results in reduced power dissipation and improved efficiency during operation.
  • Fast Switching Speed: This IGBT features a fast switching speed, which enhances the performance in applications such as switching power supplies and motor drives.
  • Co-Packaged Free Wheeling Diode: The NGTB20N120LWG includes an integrated free-wheeling diode, providing additional circuit protection and reducing component count.
  • Low Gate Charge: The device has a low total gate charge (QG), which contributes to its efficient switching characteristics.
  • Robust Temperature Performance: Stable operation over a wide temperature range is assured, thanks to its maximum junction temperature of 150°C.

Applications

The NGTB20N120LWG from ON Semiconductor is suitable for a variety of applications, including:

  • Uninterruptible Power Supplies (UPS)
  • Motor Control Systems
  • Inductive Heating
  • Solar Inverters
  • High-Frequency Converters

With its robust design and impressive electrical characteristics, the NGTB20N120LWG IGBT is a reliable component for engineers and designers looking to enhance the efficiency and performance of their power electronic systems. ON Semiconductor's commitment to quality ensures that this IGBT will deliver consistent performance and durability in the most demanding environments.

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $5.8674 $58.6740
24+ $4.8144 $115.5456
38+ $4.6639 $177.2282
52+ $4.5134 $234.6968
67+ $4.3631 $292.3277
89+ $3.9117 $348.1413
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Availability: 8,900 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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