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NCP5109ADR2G

Part No NCP5109ADR2G
Manufacturer ON Semiconductor
Catalog PMIC - Gate Drivers
Description High Voltage, High and Low Side Driver
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Integrated Circuits (ICs)
Manufacturer ON Semiconductor
Packaging Reel - TR
Driven Configuration Half-Bridge
Channel Type Independent
Number of Drivers 2
Gate Type IGBT, N-Channel MOSFET
Operating Supply Voltage 10 V ~ 20 V
Logic Voltage - VIL, VIH 0.8V, 2.3V
Current - Peak Output (Source, Sink) 250mA, 500mA
High Side Voltage - Max (Bootstrap) 200V
Rise / Fall Time (Typ) 85ns, 35ns
Operating Temperature Range -40°C ~ 125°C (TJ)
Mounting SMD
Package 8-SOIC (0.154", 3.90mm Width)
Manufacturer Package 8-SOIC
Win Source Part Number 1230317-NCP5109ADR2G
Manufacturer Homepage www.onsemi.com
Popularity Medium
Supply and Demand Status Limited
Family Name NCP5109A
ECCN EAR99
Country of Origin Philippines
Halogen Free Compliant
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian NCP5109ADR2G CAD Model

Description

ON Semiconductor NCP5109ADR2G High Voltage Gate Driver

The NCP5109ADR2G is a high-performance, high-voltage gate driver designed and manufactured by ON Semiconductor, a leading provider in the semiconductor industry. This advanced driver is specifically engineered to cater to a wide range of power applications, including but not limited to, AC-DC converters, motor drivers, and switched-mode power supplies.

With its ability to drive high-side and low-side N-channel power MOSFETs or IGBTs, the NCP5109ADR2G makes an ideal component for half-bridge, full-bridge, and other topologies that require efficient switching. The device operates over a wide supply voltage range from 10V to 20V, which provides flexibility in various circuit designs and ensures compatibility with a multitude of other components.

One of the distinguishing features of the NCP5109ADR2G is its robust output drive capability, with source and sink currents of ±2 A. This feature ensures that the device can handle the demands of rapidly charging and discharging the gate capacitance of large power transistors, leading to reduced switching times and improved overall efficiency. The driver's high peak current capability also helps in minimizing transition losses during the critical switching intervals.

The NCP5109ADR2G incorporates a range of protective features, including an undervoltage lockout (UVLO) for both channels, which prevents the device from operating under insufficient power conditions, thus safeguarding the power transistors it controls. Additionally, the driver is designed with a cross-conduction prevention logic, which eliminates the potential for shoot-through currents in the power stage, further enhancing system reliability and performance.

Available in a compact SOIC-8 package, the NCP5109ADR2G is not only efficient in its operation but also space-saving, making it suitable for high-density power applications where board space is at a premium. Its robust design ensures reliable operation in harsh environments, which is critical for industrial and automotive applications where stability and durability are paramount.

In summary, the ON Semiconductor NCP5109ADR2G High Voltage Gate Driver is a versatile and reliable component for designers looking to improve the efficiency and performance of their power management systems. Its combination of high drive capability, protective features, and compact form factor makes it an excellent choice for a wide array of power applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.2412 $55.8540
100+ $1.0184 $101.8400
155+ $0.9866 $152.9230
210+ $0.9548 $200.5080
275+ $0.9229 $253.7975
365+ $0.8275 $302.0375
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,500 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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