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HUF76639P3

Part No HUF76639P3
Manufacturer ON Semiconductor
Catalog FETs - Single
Description 50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET | MOSFET N-CH 100V 50A TO-220AB
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 51A
Rds On (Maximum) at Id, Vgs 26mOhm at 51A, 10V
Gate Source Voltage(th) (Maximum) at Id 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 86nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds 2400pF at 25V
Mounting Style Through Hole
Supplier Device Package TO-220-3
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 400
MSL Level 1 (Unlimited)
Win Source Part Number 1182482-HUF76639P3
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Commercial, Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian HUF76639P3 CAD Model

Description

The HUF76639P3 is a high-performance N-Channel Power MOSFET from ON Semiconductor. This robust component is designed for a variety of applications, including power management and switching. It is particularly well-suited for high-efficiency power supplies, motor controls, and other power conversion and control applications.

Key Features

  • High Current Handling: This MOSFET can handle continuous drain currents up to 56A, making it capable of supporting high-power applications.
  • Low On-Resistance: With a typical RDS(on) value of just 13.8 mΩ, the HUF76639P3 offers very low on-resistance, which translates to reduced power losses and improved efficiency.
  • High Voltage Tolerance: The device can withstand drain-to-source voltages up to 100V, providing a good safety margin for most applications.
  • Fast Switching Speed: The MOSFET's fast switching speed ensures efficient operation with minimal switching losses, ideal for high-frequency circuits.
  • Robust Thermal Performance: With a maximum junction temperature of 175°C, the HUF76639P3 can operate reliably even in environments with high thermal challenges.

Applications

  • DC/DC Converters
  • Power Supply Units
  • Motor Drives
  • Automotive Applications
  • Switch Mode Power Supplies (SMPS)
  • Load Switching

Package and Quality

The HUF76639P3 is offered in a TO-220AB package, which is known for its durability and ease of mounting on printed circuit boards. ON Semiconductor is committed to the highest standards of quality, ensuring that each MOSFET meets rigorous performance and reliability criteria.

Conclusion

With its combination of high current capability, low on-resistance, high voltage tolerance, and fast switching speeds, the HUF76639P3 from ON Semiconductor is an excellent choice for designers looking for a reliable and efficient N-Channel Power MOSFET. Its robust thermal performance and versatile package make it suitable for a wide range of industrial and automotive applications.

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