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HUF75829D3

Part No HUF75829D3
Manufacturer ON Semiconductor
Catalog FETs - Single
Description 18A, 150V, 0.110 Ohm, N-Channel, UltraFET Power MOSFET | MOSFET N-CH 150V 18A IPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 150V
Id - Continuous Drain Current 18A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 110mOhm at 18A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 70nC at 20V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1080pF at 25V
Power Dissipation (Maximum) 110W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package I-PAK
Manufacturer Package TO-251-3 Short Leads, IPak, TO-251AA
Manufacturer Pack Quantity 1,800
MSL Level 1 (Unlimited)
Win Source Part Number 1182443-HUF75829D3
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HUF75829D3 CAD Model

Description

Product Overview: HUF75829D3 by ON Semiconductor

The HUF75829D3 is a high-performance N-Channel UltraFET Power MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is part of a robust portfolio of power management solutions that cater to a wide range of applications, including automotive, industrial, and consumer electronics.

Engineered for optimal performance, the HUF75829D3 boasts a 75A, 30V rating, making it an excellent choice for high-current and high-voltage operations. The device is characterized by its low on-state resistance (RDS(on)), which significantly reduces conduction losses, thereby improving overall energy efficiency. This feature is particularly beneficial in applications that demand minimal power dissipation and extended battery life.

The HUF75829D3 incorporates advanced UltraFET technology that enhances its switching performance. This technology ensures that the MOSFET has fast switching speeds, a critical attribute for power supplies and DC-DC converters where high-frequency operation is paramount. The fast switching speeds also contribute to reduced switching losses, further enhancing the efficiency of the overall system.

The robustness of the HUF75829D3 is evidenced by its maximum junction temperature of 175°C, allowing it to perform reliably even under extreme thermal conditions. This durability makes it suitable for demanding environments and ensures a long operational lifespan, thereby reducing maintenance costs and system downtime.

ON Semiconductor has designed the HUF75829D3 with a TO-252 DPAK package, which not only ensures a compact footprint but also offers excellent thermal performance. The DPAK package is widely recognized for its ease of installation and is compatible with standard surface-mount technology (SMT), simplifying the assembly process and facilitating mass production.

In summary, the HUF75829D3 from ON Semiconductor is a state-of-the-art N-Channel Power MOSFET that delivers high efficiency, fast switching, and robust thermal performance. Its superior specifications make it an ideal choice for designers looking to optimize power management in their applications while maintaining reliability and cost-effectiveness.

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