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JANTX2N6766

Part No JANTX2N6766
Manufacturer Microsemi Corporation
Catalog FETs - Single
Description POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.085ohm, Id=30A) | MOSFET N-CH TO-204AE TO-3
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 30A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 90mOhm at 30A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 115nC at 10V
Gate Source Voltage (Maximum) ±20V
Power Dissipation (Maximum) 4W, 150W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-3
Manufacturer Package TO-204AE
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1191522-JANTX2N6766
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian JANTX2N6766 CAD Model

Description

The Microsemi Corporation JANTX2N6766 is an N-channel MOSFET transistor that has a Vds - Drain-Source Breakdown Voltage of 200V.

  • Transistor Type: N-channel MOSFET
  • Vds - Drain-Source Breakdown Voltage: 200V
  • Supply and Demand Status: Limited
  • Manufacturer: Microsemi Corporation
  • Category: Discrete semiconductor products
  • Reliability: Reliable component

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $57.3529 $57.3529
3+ $47.0588 $141.1764
4+ $45.5883 $182.3532
5+ $44.1177 $220.5885
6+ $42.6471 $255.8826
8+ $38.2353 $305.8824
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 255 pieces
Order Increment : 1 pcs
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