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HGT1S14N36G3VLS

Part No HGT1S14N36G3VLS
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description 14A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs | IGBT 390V 18A 100W TO263AB
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Voltage - Collector Emitter Breakdown (Maximum) 390V
Current - Collector (Ic) (Maximum) 18A
Vce(on) (Maximum) at Vge, Ic 2.2V at 5V, 14A
Maximum Power 100W
Input Type Logic
Gate Charge 24nC
Td (on/off) at 25°C -/7μs
Test Condition 300V, 7A, 25Ohm, 5V
Temperature Range - Operating -40°C ~ 175°C
Mounting Style SMD
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1180342-HGT1S14N36G3VLS
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HGT1S14N36G3VLS CAD Model

Description

ON Semiconductor HGT1S14N36G3VLS IGBT Overview

The HGT1S14N36G3VLS is a high-performance Insulated Gate Bipolar Transistor (IGBT) developed by ON Semiconductor, a leading provider of semiconductor-based solutions. This IGBT is designed to cater to a wide range of applications that require high efficiency and fast switching, such as motor drives, induction heating, and power inverters.

Featuring a robust and durable construction, the HGT1S14N36G3VLS is capable of handling high power levels with a collector-emitter voltage rating of 360V and a continuous collector current rating of 14A at 25°C. Its high-speed switching capabilities are complemented by a low saturation voltage, which helps in reducing power losses and improving overall system efficiency.

Key Features

  • Collector-Emitter Voltage (Vce): 360V
  • Continuous Collector Current (Ic): 14A at 25°C
  • Low Saturation Voltage: Enhances efficiency
  • High Input Impedance: Simplifies gate drive requirements
  • High-Speed Switching: Suitable for high-frequency applications
  • Co-Packaged with a Soft Recovery Anti-Parallel Diode

The device is also equipped with a soft recovery anti-parallel diode, which is co-packaged with the IGBT. This feature ensures minimal recovery losses during switching events, which is particularly beneficial in reducing electromagnetic interference (EMI) and improving the reliability of the system in which the IGBT is installed.

The HGT1S14N36G3VLS from ON Semiconductor is housed in a TO-262 package, which is not only compact but also offers excellent thermal performance. This package enables the device to operate reliably over a wide temperature range, making it suitable for demanding environments.

Applications

  • Motor Drives
  • Induction Heating Systems
  • Uninterruptible Power Supplies (UPS)
  • Power Inverters
  • Switch Mode Power Supplies (SMPS)

In conclusion, the HGT1S14N36G3VLS IGBT from ON Semiconductor is an exceptional choice for designers looking for a high-efficiency, fast-switching, and reliable power transistor for their advanced electronic systems.

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