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FYP2006DNTU

Part No FYP2006DNTU
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Arrays
Description DIODE ARRAY SCHOTTKY 60V TO220
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Diode Configuration 1 Pair Common Cathode
Diode Type Schottky
Voltage - DC Reverse (Vr) (Maximum) 60V
Current - Average Rectified (Io) (per Diode) 20A
Voltage - Forward (Vf) (Maximum) at If 710mV at 20A
Speed Fast Recovery = 200mA (Io)
Current - Reverse Leakage at Vr 1mA at 60V
Operating Temperature - Junction -65°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-220-3
Supplier Device Package TO-220-3
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 730970-FYP2006DNTU
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FYP2006DNTU CAD Model

Description

The ON Semiconductor FYP2006DNTU is a high-performance Power MOSFET designed to meet the rigorous demands of power conversion applications. This device is well-suited for a wide range of applications including switch-mode power supplies, power inverters, motor control systems, and other power-intensive applications where efficiency and reliability are paramount.

Key Features

  • High Current Capability: The FYP2006DNTU is capable of handling continuous drain currents up to 60A, making it ideal for high-power applications.
  • Low On-Resistance: With an RDS(on) of just 0.028 ohms, this MOSFET ensures minimal power loss and improved efficiency in your circuit.
  • High-Speed Switching: Designed for fast switching applications, the FYP2006DNTU minimizes transition losses and allows for high-frequency operation.
  • Robust Thermal Performance: The MOSFET's TO-220 package is known for its excellent thermal characteristics, ensuring reliable operation even under high-temperature conditions.
  • Enhanced Durability: The FYP2006DNTU features built-in protection against over-current, over-temperature, and voltage transients, contributing to its long operational life.

Applications

  • DC to AC Inverters
  • DC to DC Converters
  • Motor Drives
  • Power Management Systems
  • Uninterruptible Power Supplies (UPS)

Specifications

Parameter Value
Drain-to-Source Voltage (VDSS) 60V
Continuous Drain Current (ID) 60A
Pulsed Drain Current (IDM) 240A
Power Dissipation (PD) 83W
RDS(on) 0.028Ω
Operating Temperature Range -55°C to +175°C

In summary, the ON Semiconductor FYP2006DNTU Power MOSFET is a robust, efficient, and reliable component that offers superior performance for a variety of power applications. Its high current capability, low on-resistance, and fast switching speeds make it a top choice for designers looking to optimize their power systems for both performance and durability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.4441 $59.9535
320+ $0.3644 $116.6080
495+ $0.3531 $174.7845
680+ $0.3416 $232.2880
875+ $0.3303 $289.0125
1,175+ $0.2961 $347.9175
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,961 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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