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FGPF70N30TTU

Part No FGPF70N30TTU
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT 300V 49.2W TO220F / IGBT Trench 300 V 49.2 W Through Hole TO-220F-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr onsemi
Package Tube
Product Status Obsolete
IGBT Type Trench
Voltage - Collector Emitter Breakdown (Max) 300 V
Current - Collector Pulsed (Icm) 160 A
Vce(on) (Max) @ Vge, Ic 1.5V @ 15V, 20A
Power - Max 49.2 W
Input Type Standard
Gate Charge 125 nC
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220F-3
Base Product Number FGPF7
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1059083-FGPF70N30TTU
Ultra Librarian 3D Model Ultra Librarian FGPF70N30TTU CAD Model

Description

Introducing the FGPF70N30TTU IGBT from ON Semiconductor

The FGPF70N30TTU is a state-of-the-art Insulated Gate Bipolar Transistor (IGBT) developed by ON Semiconductor, a trusted leader in innovative energy-efficient power and signal management solutions. This high-performance IGBT is designed to meet the demands of a wide range of power electronics applications, offering a perfect blend of efficiency, reliability, and high-power density.

Key Features

  • High Voltage Capability: The FGPF70N30TTU is capable of handling up to 300V, making it suitable for high-voltage applications.
  • High Current Rating: With a continuous collector current rating of 70A at 25°C, this IGBT can handle significant power levels, ideal for heavy-duty operations.
  • Low Saturation Voltage: The device exhibits a low collector-emitter saturation voltage of typically 2.3V, which translates to reduced power loss and improved efficiency during operation.
  • Fast Switching Speed: Its fast switching characteristics ensure minimal transition losses, which is critical for high-frequency applications.
  • Co-Packaged Free Wheeling Diode: The IGBT comes with an integrated free-wheeling diode, which provides additional protection against reverse voltage spikes and simplifies circuit design.

Applications

The FGPF70N30TTU is versatile and can be used in various applications, including:

  • Uninterruptible Power Supplies (UPS)
  • Motor Drives
  • Power Inverters
  • Induction Heating
  • Switched Mode Power Supplies (SMPS)
  • Power Factor Correction (PFC) circuits

Package and Quality Assurance

Encased in a TO-220 fullpak package, the FGPF70N30TTU ensures robustness and ease of handling. The package is designed to optimize thermal performance and reliability under a wide range of environmental conditions. ON Semiconductor is committed to delivering high-quality products, and the FGPF70N30TTU is no exception. It is manufactured under stringent quality control standards, ensuring consistent performance and longevity for your critical power applications.

Whether you're designing for industrial, commercial, or high-tech applications, the FGPF70N30TTU IGBT from ON Semiconductor offers a powerful solution that can significantly enhance your system's overall performance.

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