The FDP045N10A from ON Semiconductor is a high-performance N-channel, PowerTrench<sup>® MOSFET designed for a wide range of applications requiring high efficiency and power density. This field-effect transistor is a part of ON Semiconductor's advanced line of power MOSFETs which utilize proprietary technology to achieve superior switching performance and low on-state resistance.
Key Features
- Low R<sub>DS(on): The device boasts an exceptionally low drain-to-source on-state resistance of just 4.5 mΩ, contributing to its high efficiency and reduced power losses during operation.
- High Continuous Drain Current: It supports a high continuous drain current (I<sub>D) of up to 80 A, making it suitable for high-power applications.
- High Voltage Capability: With a drain-to-source voltage (V<sub>DSS) of 100 V, the FDP045N10A can handle high voltage applications with ease.
- Fast Switching: The device is optimized for fast switching, enhancing performance in applications where switching speed is critical.
- PowerTrench<sup>® Technology: ON Semiconductor's proprietary PowerTrench<sup>® technology minimizes on-state resistance while maintaining superior switching performance, which is ideal for power conversion applications.
Applications
The FDP045N10A MOSFET is versatile and can be used in a variety of applications, including:
- DC/DC converters
- Synchronous rectification in SMPS (Switched Mode Power Supplies)
- Power management for servers
- Motor drives
- Battery management systems
- High-performance computing
Product Specifications
Parameter
Value
R<sub>DS(on)
4.5 mΩ
I<sub>D
80 A
V<sub>DSS
100 V
Package
TO-220
The FDP045N10A is available in a TO-220 package, which is widely used and easy to integrate into a variety of circuit designs. Its reliability and performance make it an excellent choice for designers looking to improve power efficiency and thermal management in their systems.
