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FDH50N50

Part No FDH50N50
Manufacturer ON Semiconductor
Catalog FETs - Single
Description 500V N-Channel MOSFET | MOSFET N-CH 500V 48A TO-247
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 500V
Id - Continuous Drain Current 48A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 105mOhm at 24A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 137nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 6460pF at 25V
Power Dissipation (Maximum) 625W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-247-3
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Win Source Part Number 1173801-FDH50N50
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDH50N50 CAD Model

Description

ON Semiconductor FDH50N50 Power MOSFET

The FDH50N50 is a high-performance, N-channel Power MOSFET designed and manufactured by ON Semiconductor, a trusted leader in power and signal management solutions. This robust semiconductor device is engineered to deliver superior switching performance and high reliability, making it an ideal choice for a wide range of power applications.

Featuring advanced UniFET™ technology, the FDH50N50 boasts an impressive 500V drain-to-source voltage (VDS), which is well-suited for high-voltage power applications. Its low on-resistance (RDS(on)) minimizes conduction losses, while the high current rating ensures that it can handle demanding power loads with ease.

The device's fast switching speed is another key attribute, reducing switching losses and improving overall efficiency in applications such as power supplies, motor drives, and lighting systems. Additionally, the FDH50N50 features a rugged gate oxide that provides excellent protection against gate voltage stress, further enhancing its reliability and lifespan.

The FDH50N50 comes in a TO-247 package, which is widely recognized for its excellent thermal performance and mechanical robustness. This package design allows for efficient heat dissipation, ensuring that the MOSFET operates within safe temperature limits even under high power conditions.

ON Semiconductor's commitment to environmental sustainability is evident in the FDH50N50, which is compliant with RoHS (Restriction of Hazardous Substances) regulations. This compliance ensures that the device is free from harmful substances like lead, making it a more environmentally friendly option for electronic designers and manufacturers.

In conclusion, the FDH50N50 Power MOSFET from ON Semiconductor is a high-quality, reliable component that offers excellent performance for high-voltage and high-power applications. Its advanced technology, robust design, and environmental compliance make it a superior choice for engineers looking to optimize their power management systems.

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