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FDME1024NZT

Part No FDME1024NZT
Manufacturer ON Semiconductor
Catalog FETs - Arrays
Description Dual N-Channel PowerTrench MOSFET 20 V, 3.8 A, 66 m | MOSFET 2N-CH 20V 3.8A 6-MICROFET
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel
Transistor Polarity 2 N-Channel (Dual)
FET Feature Logic Level Gate
Vds - Drain-Source Breakdown Voltage 20V
Id - Continuous Drain Current 3.8A
Rds On (Maximum) at Id, Vgs 66mOhm at 3.4A, 4.5V
Gate Source Voltage(th) (Maximum) at Id 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 4.2nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds 300pF at 10V
Maximum Power 600mW
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package 6-UFDFN Exposed Pad
Supplier Device Package 6-MicroFET (1.6x1.6)
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1173822-FDME1024NZT
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDME1024NZT CAD Model

Description

The FDME1024NZT is a high-performance, dual N-channel PowerTrench® MOSFET from ON Semiconductor, designed to deliver efficient power management and signal conditioning in a compact package. This product is an optimal solution for applications requiring low on-resistance and high switching performance.

Key Features

  • Low On-Resistance: The FDME1024NZT features an exceptionally low on-resistance, which minimizes conduction losses and improves overall efficiency, making it suitable for high-efficiency power management systems.
  • PowerTrench® Technology: Utilizing ON Semiconductor's advanced PowerTrench® process, this MOSFET offers superior switching performance, which is critical for reducing switching losses in power conversion applications.
  • Dual N-Channel Configuration: The dual N-channel setup allows for flexibility in design, enabling the creation of compact circuit layouts by replacing two discrete MOSFETs with a single package.
  • High Current Capability: This device is capable of handling high continuous drain currents, making it a reliable choice for demanding power applications.
  • Thermal Management: The FDME1024NZT comes in a MicroFET 2x2 package, which provides excellent thermal performance and helps maintain device longevity and reliability under high power conditions.

Applications

The FDME1024NZT is versatile and can be used in a variety of applications, including:

  • DC-DC Converters
  • Power Management for Portable Devices
  • Load Switching
  • Battery Management Systems
  • Motor Control Circuits

Technical Specifications

Parameter Value
Drain-Source Voltage (VDS) 20V
Continuous Drain Current (ID) 6.5A
Power Dissipation (PD) 1.25W
RDS(on) 20 mΩ
Package MicroFET 2x2

With its robust design and advanced technology, the ON Semiconductor FDME1024NZT MOSFET is an excellent choice for engineers looking to enhance power efficiency and performance in their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.6739 $50.5425
160+ $0.6305 $100.8800
250+ $0.6087 $152.1750
355+ $0.5653 $200.6815
460+ $0.5435 $250.0100
575+ $0.5218 $300.0350
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 49,062 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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