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FDG6332C-PG

Part No FDG6332C-PG
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N P-CH 20V SC70-6 / Mosfet Array N and P-Channel Complementary 20V 700mA (Ta), 600mA (Ta) 300mW (Ta) Surface Mount SC-88/SC70-6/SOT-363
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr onsemi
Series PowerTrench®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N and P-Channel Complementary
FET Feature Standard
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 700mA (Ta), 600mA (Ta)
Rds On (Max) @ Id, Vgs 300mOhm @ 700mA, 4.5V, 420mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 4.5V, 2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 113pF @ 10V, 114pF @ 10V
Power - Max 300mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363
ECCN EAR99
HTSUS 8541.21.0095
Other Names 488-FDG6332C-PGTR
Standard Package 3,000
Win Source Part Number 1009648-FDG6332C-PG
Ultra Librarian 3D Model Ultra Librarian FDG6332C-PG CAD Model

Description

The FDG6332C-PG from ON Semiconductor is a high-performance, dual N & P-Channel PowerTrench® MOSFET designed to deliver efficient power management and control in a compact package. This MOSFET is an ideal choice for a wide range of applications, including power switching circuits, power management in portable and battery-powered products, and load switch applications.

Key Features

  • Low Power Consumption: Designed with PowerTrench technology to minimize on-state resistance, resulting in lower power loss and improved energy efficiency.
  • Dual Channel Configuration: Integrates one N-channel and one P-channel MOSFET in a single SC70-6 package, saving space and reducing component count in circuit designs.
  • High-Speed Switching: Capable of fast switching speeds, which is crucial for applications requiring quick response times.
  • Low Threshold Voltage: Features a low gate threshold voltage, making it suitable for low voltage applications and ensuring easy drive from logic level circuits.
  • RoHS Compliant: Manufactured with environmentally friendly materials, complying with RoHS standards for hazardous substance regulations.

Applications

  • Power management for portable devices
  • DC/DC converters
  • Battery management systems
  • Load switch circuits
  • Power supply distribution controls

Product Specifications

Parameter Value
Package SC70-6
Drain-Source Voltage (VDS N-Channel) 20V
Drain-Source Voltage (VDS P-Channel) -20V
Continuous Drain Current (ID N-Channel) 540 mA
Continuous Drain Current (ID P-Channel) -430 mA
Power Dissipation 250 mW
RDS(ON) 0.5Ω (N-Channel), 0.8Ω (P-Channel)

The FDG6332C-PG MOSFET from ON Semiconductor offers a reliable and efficient solution for designers looking to optimize their power management systems with a versatile and compact component.

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.4716 $51.8760
230+ $0.4418 $101.6140
355+ $0.4269 $151.5495
505+ $0.3970 $200.4850
655+ $0.3821 $250.2755
820+ $0.3672 $301.1040
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 25,460 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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