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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tape and Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 12A, 46A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 10mOhm at 12A, 10V
Gate Source Voltage(th) (Maximum) at Id 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 18nC at 5V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1230pF at 15V
Power Dissipation (Maximum) 3.3W, 56W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D-PAK (TO-252)
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Family Part Number FDD6680
Manufacturer Pack Quantity 2,500
MSL Level 1 (Unlimited)
Win Source Part Number 1173777-FDD6680
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDD6680 CAD Model

Description

ON Semiconductor FDD6680 Product Overview

The ON Semiconductor FDD6680 is a high-performance PowerTrench® MOSFET designed to deliver superior power efficiency and density, making it an ideal choice for a wide range of power management applications. This device is engineered to meet the rigorous demands of modern electronic circuits, providing a combination of low on-resistance and high switching speeds.

Key Features

  • Low On-Resistance: The FDD6680 boasts an exceptionally low R<sub>DS(on), which translates to reduced conduction losses and improved overall efficiency.
  • High Current Capability: With its ability to handle high currents, this MOSFET is suitable for demanding applications that require robust power handling.
  • Fast Switching Speed: The fast switching characteristics of the FDD6680 enable efficient operation at high frequencies, which is critical for reducing switching losses.
  • PowerTrench® Technology: ON Semiconductor's proprietary PowerTrench® process technology enhances the device's performance by optimizing the cell structure for reduced gate charge and capacitance.

Applications

The versatility of the FDD6680 allows it to be used in various applications including:

  • DC/DC converters
  • Power supply units
  • Motor drives
  • Battery management systems
  • Load switches
  • Point of Load (POL) modules

Specifications

Some of the key specifications of the FDD6680 include:

  • Drain-Source Voltage (V<sub>DSS): 30V
  • Continuous Drain Current (I<sub>D): 84A
  • Power Dissipation (P<sub>D): 2.5W
  • Operating Temperature Range: -55°C to +175°C

Reliability and Quality

ON Semiconductor is committed to providing products that meet the highest standards of quality and reliability. The FDD6680 MOSFET is rigorously tested to ensure performance consistency and is compliant with industry standards for quality assurance.

Whether you are developing power supplies, motor controls, or sophisticated power management systems, the FDD6680 from ON Semiconductor offers the performance, efficiency, and reliability that engineers need to create cutting-edge solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
355+ $0.1837 $65.2135
865+ $0.1501 $129.8365
1,330+ $0.1462 $194.4460
1,835+ $0.1410 $258.7350
2,360+ $0.1371 $323.5560
3,160+ $0.1229 $388.3640
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 27,450 pieces
MOQ: 355 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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