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FDD45AN06LA0

Part No FDD45AN06LA0
Manufacturer ON Semiconductor
Catalog FETs - Single
Description N-Channel PowerTrench MOSFET 60V, 22A, 45m | MOSFET N-CH 60V 25A DPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 5.2A, 25A
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Maximum) at Id, Vgs 36mOhm at 25A, 10V
Gate Source Voltage(th) (Maximum) at Id 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 11nC at 5V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 880pF at 25V
Power Dissipation (Maximum) 55W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package TO-252AA
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1173758-FDD45AN06LA0
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FDD45AN06LA0 CAD Model

Description

Introducing the FDD45AN06LA0 MOSFET from ON Semiconductor

The FDD45AN06LA0 is a cutting-edge N-Channel PowerTrench® MOSFET brought to you by ON Semiconductor, a leader in energy-efficient innovations. This high-performance component is designed to address the demanding needs of modern electronic circuits, offering a perfect blend of low on-resistance and cost-effectiveness, making it an ideal choice for a wide range of applications.

Key Features

  • Low RDS(on): The FDD45AN06LA0 boasts an exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
  • High Current Capability: With its robust construction, this MOSFET can handle high currents, making it suitable for demanding power applications.
  • PowerTrench® Technology: ON Semiconductor's proprietary PowerTrench® technology ensures minimal gate charge and capacitance, which results in faster switching performance and reduced power dissipation.
  • Thermal Management: The device comes in a TO-252 (DPAK) package, known for its excellent thermal characteristics, ensuring the MOSFET operates within safe temperature ranges even under high current conditions.

Applications

The versatility of the FDD45AN06LA0 MOSFET makes it suitable for a wide array of applications, including:

  • Power supply units
  • DC-DC converters
  • Motor drives
  • Battery management systems
  • Automotive applications
  • Switching applications that require high efficiency

Product Specifications

This MOSFET operates with a 60V drain-to-source voltage (VDSS), a continuous drain current (ID) of up to 38A, and a power dissipation (PD) of 48W. It features a low gate charge (QG) which enhances its switching performance, and it's RoHS compliant, ensuring it meets the latest environmental standards.

ON Semiconductor's commitment to quality and performance is evident in the FDD45AN06LA0 MOSFET. It is a reliable choice for engineers looking to optimize their power management solutions with a component that offers both high efficiency and durability.

Conclusion

Whether you're designing power systems for consumer electronics, automotive, industrial, or renewable energy applications, the FDD45AN06LA0 from ON Semiconductor provides the performance and reliability you need. Its advanced technology and robust package design ensure optimal performance for a broad spectrum of power applications.

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