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FCPF250N65S3R0L-F154

Part No FCPF250N65S3R0L-F154
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description POWER MOSFET, N-CHANNEL, SUPERFE / N-Channel 650 V 12A (Tj) 31W (Tc) Through Hole TO-220F-3
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Series SuperFET® III
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 12A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 250mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 290µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1010 pF @ 400 V
Power Dissipation (Max) 31W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220F-3
Package / Case TO-220-3 Full Pack
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 488-FCPF250N65S3R0L-F154TR,488-FCPF250N65S3R0L-F154TR-ND,488-FCPF250N65S3R0L-F154,488-FCPF250N65S3R0L-F154DKR-ND,488-FCPF250N65S3R0L-F154CTINACTIVE,488-FCPF250N65S3R0L-F154CT,488-FCPF250N65S3R0L-F154DKRINACTIVE,488-FCPF250N65S3R0L-F154DKR,488-FCPF250N65S3R0L-F154CT-ND
Standard Package 50
Win Source Part Number 1209589-FCPF250N65S3R0L-F154
Ultra Librarian 3D Model Ultra Librarian FCPF250N65S3R0L-F154 CAD Model

Description

ON Semiconductor FCPF250N65S3R0L-F154 Power MOSFET

The ON Semiconductor FCPF250N65S3R0L-F154 is an advanced Power MOSFET device designed to deliver high efficiency and performance for a wide range of power applications. This semiconductor component is part of the renowned ON Semiconductor portfolio, known for its reliability and cutting-edge technology.

This N-channel MOSFET operates at 650V, making it suitable for high-voltage applications. It is built using ON Semiconductor's proprietary SuperFET III technology, which is optimized for minimal on-resistance and low gate charge performance. The result is a product that offers reduced conduction losses and improved switching performance, making it ideal for high-efficiency power supplies, lighting applications, and industrial power systems.

The FCPF250N65S3R0L-F154 boasts an impressive continuous drain current (ID) of 3A, which allows it to handle significant power without overheating. Its low total gate charge (Qg) enhances its suitability for high-frequency switching applications, where power efficiency and speed are crucial. The device also features a robust body diode, which provides fast recovery time and contributes to the overall efficiency of the system in which it's implemented.

With a max junction temperature of 150°C, the FCPF250N65S3R0L-F154 is capable of operating under extreme conditions, ensuring reliability and a long operational lifespan. Its package is the TO-220F, which is known for its durability and ease of mounting on printed circuit boards (PCBs).

Key Features:

  • 650V N-channel MOSFET
  • 3A Continuous Drain Current
  • SuperFET III Technology
  • Low On-Resistance
  • Low Gate Charge
  • High Switching Performance
  • Robust Body Diode with Fast Recovery Time
  • High Maximum Junction Temperature (150°C)
  • TO-220F Package

The FCPF250N65S3R0L-F154 is a testament to ON Semiconductor's commitment to providing high-performance components that meet the evolving needs of modern power systems. Whether for power management in consumer electronics or industrial applications, this Power MOSFET is an excellent choice for designers looking to enhance efficiency and reliability.

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