The 2SK4067-TL-E is a high-performance Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This N-Channel MOSFET is a testament to ON Semiconductor's commitment to providing advanced power management solutions that cater to a wide range of applications, including power supplies, motor controls, and high-speed switching circuits.
Key Features
- Low On-Resistance: The 2SK4067-TL-E MOSFET boasts a low on-resistance, which reduces power loss and improves efficiency in electronic circuits.
- High-Speed Switching: Designed for high-speed switching applications, this MOSFET provides fast transition times, contributing to the overall performance of the system.
- High Drain-Source Voltage: With a high drain-source voltage (V<sub>DS), this component can handle significant voltage levels, making it suitable for robust applications.
- Low Gate Charge: The reduced gate charge (Q<sub>G) allows for lower switching energies and faster operation of the device.
- Enhanced Durability: The 2SK4067-TL-E comes in a robust package, ensuring long-term reliability and durability even under challenging conditions.
Applications
The 2SK4067-TL-E MOSFET is versatile and can be used in various electronic devices and systems. Its typical applications include:
- DC/DC converters
- Power management systems
- Motor drives and controls
- Inverters
- Switching regulators
- LED lighting solutions
Product Specifications
Parameter
Value
Drain-Source Voltage (V<sub>DS)
60V
Continuous Drain Current (I<sub>D)
50A
Power Dissipation (P<sub>D)
45W
Operating Temperature Range
-55°C to +150°C
With its superior performance and ON Semiconductor's quality assurance, the 2SK4067-TL-E MOSFET is an excellent choice for designers and engineers looking to enhance the efficiency and reliability of their power management systems.
