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PMEG2010AEB

Part No PMEG2010AEB
Manufacturer NXP / Nexperia
Catalog Diodes, Rectifiers - Single
Description DIODE SCHOTTKY 20V 1A SOD523
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Diode Type Schottky
Voltage - DC Reverse (Vr) (Max) 20V
Current - Average Rectified (Io) 1A (DC)
Voltage - Forward (Vf) (Max) @ If 620mV @ 1A
Speed(Frequency) Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr 1.5mA @ 20V
Capacitance @ Vr, F 25pF @ 1V, 1MHz
Mounting SMD (SMT)
Case / Package SOD-523
Operating Temperature - Junction 150°C (Max)
Win Source Part Number 095413-PMEG2010AEB
Family Name PMEG2010AEB
Introduction Date December 03, 2003
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2023
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PMEG2010AEB CAD Model

Description

PMEG2010AEB Schottky Barrier Rectifier Diode from NXP Semiconductors

The PMEG2010AEB is a highly efficient, low voltage drop Schottky barrier rectifier diode designed by NXP Semiconductors, one of the leading names in the industry. This component is specifically engineered to meet the stringent requirements of modern electronic applications, offering a combination of low power loss, high efficiency, and a compact package size.

With a reverse voltage of 20V and a forward current of 1A, the PMEG2010AEB is perfectly suited for use in low voltage, high-frequency inverters, free-wheeling, and polarity protection applications. It is particularly useful in portable devices, where power efficiency is crucial to maximizing battery life. The device's low forward voltage drop contributes significantly to reducing power loss and improving overall system efficiency.

The PMEG2010AEB comes in a small, leadless ultra thin DFN2020-3 (SOT1061) Surface-Mounted Device (SMD) package, which is designed to occupy minimal space on a printed circuit board (PCB). This makes it an ideal choice for densely packed PCBs where space is at a premium. Its leadless design also enhances thermal performance and allows for better power dissipation, ensuring reliability even under high switching frequencies or high thermal environments.

Key features of the PMEG2010AEB include its low forward voltage (Vf), typically around 0.37V at IF = 1A, and its low reverse current, which helps to minimize power loss. Additionally, its planar Schottky barrier technology ensures a high level of performance stability over time and temperature variations, which is critical for maintaining the efficiency and longevity of the application it is used in.

For designers and engineers looking for a rectifier diode that combines space-saving with energy efficiency, the PMEG2010AEB from NXP Semiconductors is an excellent choice. Its robustness, reliability, and superior electrical characteristics make it a go-to component for a wide range of power management applications.

Overall, the PMEG2010AEB is a testament to NXP's commitment to providing high-quality, innovative semiconductor solutions that meet the evolving needs of the electronics industry.

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Pricing & Ordering

Quantity Unit Price Ext. Price
215+ $0.2376 $51.0840
450+ $0.2226 $100.1700
700+ $0.2151 $150.5700
1,000+ $0.2000 $200.0000
1,300+ $0.1925 $250.2500
1,625+ $0.1850 $300.6250
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Prices are subject to market and will be confirmed after the order is placed.
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Availability: 351,777 pieces
MOQ: 215 pcs
Order Increment : 1 pcs
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