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PMBFJ111,215

Part No PMBFJ111,215
Manufacturer NXP / Nexperia
Catalog JFETs (Junction Field Effect)
Description JFET N-CH 40V 0.3W SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Voltage - Breakdown (V(BR)GSS) 40V
Drain-Source Breakdown Voltage 40V
Current - Drain (Idss) @ Vds (Vgs=0) 20mA @ 15V
Voltage - Cutoff (VGS off) @ Id 10V @ 1μA
Max Input Capacitance 6pF @ 10V (VGS)
Resistance - RDS(On) 30 Ohm
Maximum Power Dissipation 300mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23 (TO-236AB)
Win Source Part Number 102559-PMBFJ111,215
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Audio, Power Management
Ultra Librarian 3D Model Ultra Librarian PMBFJ111,215 CAD Model

Description

The PMBFJ111,215 is a high-performance N-channel junction field-effect transistor (JFET) designed by NXP Semiconductors, a leader in the semiconductor industry. This particular JFET is part of NXP's reliable and efficient range of discrete semiconductor products, tailored for a multitude of electronic applications.

Key Features

  • High-Speed Switching: The PMBFJ111,215 is optimized for rapid switching, making it an ideal component for high-frequency and digital applications.
  • Low Gate-Source Cutoff Voltage: It features a low cutoff voltage, which ensures low power consumption and enhances the overall efficiency of the device it's integrated into.
  • Low On-State Resistance: The low on-state resistance of this JFET translates to minimal power loss during operation, contributing to the longevity and reliability of the final product.
  • Surface-Mount Package: The device comes in a compact SOT-23 package, which is suitable for automated assembly processes and helps save space on printed circuit boards (PCBs).

Applications

The versatility of the PMBFJ111,215 allows it to be used in a wide range of applications. Some of these include:

  • High-speed switching circuits
  • Analog switches
  • Choppers and commutators
  • Audio amplifiers
  • Signal processing
  • Low-power applications

Technical Specifications

Parameter Value
Drain-Source Voltage (VDS) 30V
Gate-Source Cutoff Voltage (VGS(off)) -0.5V to -3V
Drain Current (ID) 10mA
Package Type SOT-23

With its combination of high-speed switching capabilities, low power consumption, and compact form factor, the PMBFJ111,215 from NXP Semiconductors is an excellent choice for designers looking to enhance the performance and efficiency of their electronic systems.

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