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MW7IC2750NBR1

Part No MW7IC2750NBR1
Manufacturer NXP / Nexperia
Catalog RF Amplifiers
Description IC PWR AMP RF 2700MHZ TO-272-14 / High Gain RF Amplifier
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories RF/IF and RFID
Manufacturer NXP
Packaging Reel package
Part Status Obsolete(EOL)
Frequency 2.3GHz ~ 2.7GHz
P1dB 47dBm (50W)
Gain 26dB
RF Type WiMax
Operating Supply Voltage 28V
Operating Supply Current 550mA
Test Frequency 2.7GHz
Package TO-272-14 Variant, Flat Leads
Manufacturer Package TO-272 WB-14
Win Source Part Number 790300-MW7IC2750NBR1
Popularity Medium
Supply and Demand Status Limited
Family Name MW7IC2750NB
Introduction Date April 05, 2008
ECCN EAR99
Halogen Free Not Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian MW7IC2750NBR1 CAD Model

Description

The NXP MW7IC2750NBR1 is a high-performance RF power transistor designed to meet the rigorous demands of RF energy applications. This device is part of NXP's advanced LDMOS technology line, which is renowned for its high efficiency, ruggedness, and reliability in continuous wave (CW) and pulsed operations.

Key Features

  • Frequency Range: The transistor operates within the 2,700 to 2,900 MHz frequency band, making it an excellent choice for industrial, scientific, and medical (ISM) applications, as well as for RF plasma lighting, laser excitation, and particle accelerators.
  • High Power: With an output power of up to 70 Watts, this device ensures strong signal amplification for various applications, maintaining signal integrity and strength even under demanding conditions.
  • High Efficiency: The MW7IC2750NBR1 boasts high efficiency, which is critical for reducing thermal loads and improving system longevity. This efficiency also translates into energy savings and lower operational costs.
  • Ruggedness: Designed to withstand a high voltage standing wave ratio (VSWR), the MW7IC2750NBR1 is built to be resilient and to perform consistently even in the most challenging environments.
  • Integrated ESD Protection: Electrostatic discharge (ESD) protection is integrated into the device, safeguarding it against sudden electrical surges and ensuring stable performance over time.

Applications

The versatility of the MW7IC2750NBR1 allows it to be used in a variety of applications. Its primary use in ISM band applications is complemented by its suitability for use in RF energy applications such as cooking, defrosting, and medical procedures where precision and reliability are paramount. The device's robustness also makes it ideal for use in harsh industrial environments.

Quality and Reliability

NXP's commitment to quality is evident in the MW7IC2750NBR1, which is manufactured to the highest standards. Customers can expect consistent performance and durability from a brand that is a leader in RF technology. Whether for commercial or industrial use, this RF power transistor is designed to deliver top-tier performance while maintaining NXP's reputation for quality and innovation.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $46.9219 $93.8438
3+ $38.5008 $115.5024
5+ $37.2973 $186.4865
7+ $36.0938 $252.6566
9+ $34.8914 $314.0226
12+ $31.2820 $375.3840
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Availability: 21 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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