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MML09231HT1

Part No MML09231HT1
Manufacturer NXP / Nexperia
Catalog RF Amplifiers
Description IC RF AMP GSM 700MHZ-1.4GHZ 8DFN / RF Amplifier IC GSM, LTE, W-CDMA 700MHz ~ 1.4GHz 8-DFN (2x2)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category RF and Wireless - RF Amplifiers
Mfr NXP USA Inc.
Package Tape & Reel
Product Status Obsolete
Frequency 700MHz ~ 1.4GHz
P1dB 24.5dBm
Gain 17.2dB
Noise Figure 0.36dB
RF Type GSM, LTE, W-CDMA
Voltage - Supply 5V
Current - Supply 55mA
Test Frequency 900MHz
Mounting Type Surface Mount
Package / Case 8-VFDFN Exposed Pad
Supplier Device Package 8-DFN (2x2)
Base Product Number MML09
Standard Package 1,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN 5A991G
HTSUS 8542.33.0001
Win Source Part Number 1345994-MML09231HT1
Ultra Librarian 3D Model Ultra Librarian MML09231HT1 CAD Model

Description

The MML09231HT1 is a high-performance RF power LDMOS transistor designed and manufactured by NXP Semiconductors. This advanced transistor is specifically engineered to meet the rigorous demands of high-power broadband applications. With its exceptional efficiency and reliability, the MML09231HT1 is an ideal choice for a wide range of uses, including commercial, aerospace, and defense systems.

Key Features

  • Frequency Range: The MML09231HT1 operates over a broad frequency spectrum, making it highly versatile for various RF applications.
  • High Power Output: It is capable of delivering significant output power, which is essential for applications requiring high signal strength.
  • High Gain: This transistor offers a high gain, ensuring that the signal is amplified effectively for clear transmission or reception.
  • High Efficiency: With its excellent efficiency, the MML09231HT1 reduces power consumption and heat dissipation, which can be critical in systems where energy management is a concern.
  • Thermal Performance: The device is designed with superior thermal performance in mind, ensuring stable operation even under high-temperature conditions.
  • Ruggedness: Its rugged construction allows the MML09231HT1 to withstand harsh environments and stress, making it suitable for military and other demanding applications.

Applications

The MML09231HT1 is adept at serving a multitude of applications. It is commonly used in:

  • Broadband RF power amplifiers
  • Commercial wireless infrastructure
  • Industrial, scientific, and medical (ISM) applications
  • Aerospace and defense systems

Quality and Reliability

NXP Semiconductors is known for its commitment to quality, and the MML09231HT1 is no exception. It is manufactured under stringent quality control standards, ensuring that each unit meets or exceeds industry specifications for performance and reliability. The device also comes with comprehensive technical support from NXP, providing customers with the assistance they need to integrate this transistor into their designs effectively.

Overall, the MML09231HT1 from NXP is a robust and reliable component that offers a blend of power, efficiency, and versatility, making it a top choice for designers looking to enhance their RF power capabilities.

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