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A2I20D040GNR1

Part No A2I20D040GNR1
Manufacturer NXP / Nexperia
Catalog RF Amplifiers
Description IC RF AMP 1.4GHZ-2.2GHZ TO270WBG / RF Amplifier IC 1.4GHz ~ 2.2GHz TO-270WBG-17
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category RF and Wireless - RF Amplifiers
Mfr NXP USA Inc.
Series -
Package Tape & Reel
Product Status Active
Frequency 1.4GHz ~ 2.2GHz
P1dB 36.3W
Gain 32.7dB
Noise Figure -
Voltage - Supply 28V
Current - Supply 220mA
Test Frequency 1.8GHz ~ 2.2GHz
Mounting Type Surface Mount
Package / Case TO-270-17 Variant, Gull Wing
Supplier Device Package TO-270WBG-17
Base Product Number A2I20
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.33.0001
Win Source Part Number 1355276-A2I20D040GNR1
Ultra Librarian 3D Model Ultra Librarian A2I20D040GNR1 CAD Model

Description

The A2I20D040GNR1 is a state-of-the-art RF power transistor designed by NXP Semiconductors, a leader in the industry known for its innovative and reliable products. This high-performance transistor is part of NXP's Airfast RF power solutions and is specifically engineered to meet the rigorous demands of today's wireless infrastructure applications.

With its advanced LDMOS technology, the A2I20D040GNR1 offers exceptional efficiency and gain, making it an ideal choice for applications such as cellular base station power amplifiers, broadcasting transmitters, and RF heating. Its wide frequency range covers 1800 to 2200 MHz, providing versatility and making it suitable for various communication bands including LTE, GSM, WCDMA, and CDMA.

The product boasts a high output power of 40 Watts CW and an impressive gain of 17.3 dB, ensuring strong signal amplification and clear transmission. Its high efficiency of 45.8% reduces the overall power consumption, leading to lower operational costs and a more sustainable energy footprint.

The A2I20D040GNR1 is housed in a compact, over-molded plastic package which is not only robust but also provides excellent thermal performance. This ensures reliable operation even under high-temperature conditions, a critical factor for equipment deployed in outdoor environments.

Installation and integration are made simple with the transistor's input and output matching, which minimizes the need for additional RF tuning components. This reduces the overall design complexity and allows for a more streamlined manufacturing process.

NXP's commitment to quality is evident in the A2I20D040GNR1, with features such as integrated ESD protection and a MTTF of 1 million hours, ensuring long-term reliability and performance. Whether for commercial or industrial use, this RF power transistor is designed to deliver consistent, high-quality output, making it a top choice for RF design engineers around the globe.

Key Features:

  • Frequency Range: 1800 to 2200 MHz
  • High Output Power: 40 Watts CW
  • High Gain: 17.3 dB
  • High Efficiency: 45.8%
  • Robust Plastic Package
  • Integrated ESD Protection
  • MTTF of 1 Million Hours

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $43.6364 $87.2728
3+ $35.8042 $107.4126
5+ $34.6853 $173.4265
6+ $33.5664 $201.3984
8+ $32.4476 $259.5808
11+ $29.0909 $319.9999
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 500 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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