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Same model may have multiple batches, images only for reference.
PBLS1503Y,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PBLS1503Y,115

Part No PBLS1503Y,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN PREBIAS/PNP 6TSSOP
Datasheet
PBLS1503Y,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN Pre-Biased, 1 PNP
Maximum Current Collector 100mA, 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V, 15V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 30 @ 5mA, 5V / 150 @ 100mA. 2V
Max Vce (sat) 150mV @ 500μA, 10mA / 250mV @ 50mA, 500mA
Collector Cut-off Current(Max) 1μA, 100nA
Frequency - Transition 280MHz
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package 6-TSSOP
Win Source Part Number 1086360-PBLS1503Y,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PBLS1503Y,115 CAD Model

Description

The Nexperia USA Inc. PBLS1503Y,115 is a pre-biased NPN and PNP transistor in one package.

  • Manufacturer: Nexperia USA Inc.
  • Product Name: PBLS1503Y,115
  • Type: pre-biased NPN and PNP transistor
  • Frequency: 280MHz
  • Collector Cut-off Current: 1μA and 100nA
  • Typical Gain: 30 @ 5mA and 5V, 150 @ 100mA and 2V
  • Maximum Collector-Emitter Breakdown Voltage: 50V and 15V
  • Maximum Current Collector: 100mA and 500mA
  • Maximum Power Dissipation: 300mW
  • Maximum Vce (sat): 150mV @ 500μA and 10mA, 250mV @ 50mA and 500mA
  • Package: 6-TSSOP
  • Application: discrete semiconductor products

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