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Same model may have multiple batches, images only for reference.
GAN080-650EBEZ Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

GAN080-650EBEZ

Part No GAN080-650EBEZ
Manufacturer Nexperia USA Inc.
Catalog FETs - Single
Description 650 V, 80 MOHM GALLIUM NITRIDE (
Datasheet
GAN080-650EBEZ Datasheet
Sample
Rohs State rohs
ECAD Module
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Win Source Part Number WS1202237-GAN080-650EBEZ
Manufacturer Nexperia USA Inc.
Category Discrete Semiconductor Products -Transistors- FETs, MOSFETs-Single FETs, MOSFETs
Package Tape & Reel (TR) Cut Tape (CT)
Product Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank
Supplier Device Package DFN8080-8
Package / Case 8-VDFN Exposed Pad
Ultra Librarian 3D Model Ultra Librarian GAN080-650EBEZ CAD Model

Description

The GaNFET (Gallium Nitride) N-Channel FET is a high-performance transistor manufactured by Nexperia USA Inc.

  • Category: Discrete Semiconductor Products
  • Application: FETs and MOSFETs
  • Technology: GaNFET
  • Package: 8-VDFN Exposed Pad
  • Operating Temperature Range: -55°C to 150°C
  • Status: Active
  • Mounting: Surface Mount
  • Feature: Wettable Flank

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