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Same model may have multiple batches, images only for reference.
APT9M100B Real Image
Same model may have multiple batches, images only for reference.

APT9M100B

Part No APT9M100B
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Series POWER MOS 8
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 1000V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 80nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2605pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 335W (Tc)
Rds On (Maximum) @ Id, Vgs 1.4 Ohm @ 5A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-247 [B]
Package TO-247-3
Win Source Part Number 1146918-APT9M100B
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1
Family Name APT9M100B
Introduction Date January 09, 2006
ECCN EAR99
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian APT9M100B CAD Model

Description

The APT9M100B is a high performance N-channel MOSFET from Microsemi Corporation.

  • Series: POWER MOS 8
  • Package: TO-247-3
  • Manufacturer Homepage: www.microsemi.com
  • Applications: Suitable for use in high voltage and high current applications such as power supplies, motor drives, and inverters.
  • Maximum Drain-Source Voltage: 1000V
  • Maximum Continuous Drain Current: 9A
  • Gate Threshold Voltage: 5V
  • Gate Charge: 80nC
  • Maximum Power Dissipation: 335W
  • Maximum On-Resistance: 1.4 Ohm @ 5A and 10V

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