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Same model may have multiple batches, images only for reference.
APT8M100B Real Image
Same model may have multiple batches, images only for reference.

APT8M100B

Part No APT8M100B
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel MOSFET
Datasheet
APT8M100B Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 1000V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 60nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1885pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 290W (Tc)
Rds On (Maximum) @ Id, Vgs 1.8 Ohm @ 4A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-247 [B]
Package TO-247-3
Win Source Part Number 1146915-APT8M100B
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Limited
Family Name APT8M100B
Introduction Date January 09, 2006
ECCN EAR99
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian APT8M100B CAD Model

Description

The Microsemi Corporation APT8M100B is a MOSFET that belongs to the APT8M100B family.

  • Manufacturer: Microsemi Corporation
  • Product Family: APT8M100B
  • Supply and Demand Status: limited
  • Case/Package: TO-247-3
  • Drain-Source Voltage: 1000V
  • Continuous Drain Current: 8A (Tc)
  • Maximum Power Dissipation: 290W (Tc)
  • Maximum Rds On @ Id, Vgs: 1.8 Ohm @ 4A, 10V

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