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Same model may have multiple batches, images only for reference.
2N930 Real Image
Same model may have multiple batches, images only for reference.

2N930

Part No 2N930
Manufacturer Microsemi Corporation
Catalog Transistors (BJT) - Single
Description LOW-LEVEL, LOW-NOISE AMPLFIERS | TRANS NPN 45V 0.03A TO18
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Transistor Type NPN
Current - Collector (Ic) (Maximum) 30mA
Voltage - Collector Emitter Breakdown (Maximum) 45V
Vce Saturation (Maximum) at Ib, Ic 1V at 500μA, 10mA
Current - Collector Cutoff (Maximum) 2nA
DC Current Gain (hFE) (Minimum) at Ic, Vce 100 at 10μA, 5V
Maximum Power 300mW
Temperature Range - Operating -55°C ~ 200°C
Mounting Style Through Hole
Manufacturer Package TO-206AA, TO-18-3 Metal Can
Supplier Device Package TO-18 (TO-206AA)
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1124272-2N930
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2N930 CAD Model

Description

The Microsemi Corporation 1124272-2N930 is an NPN transistor with a TO-18 (TO-206AA) package.

  • Component: Microsemi Corporation 1124272-2N930
  • Type: NPN transistor
  • Package: TO-18 (TO-206AA)
  • Mounting: Through-hole
  • Current - Collector (Ic) (Maximum): 30mA
  • Voltage - Collector Emitter Breakdown (Maximum): 45V
  • Current - Collector Cutoff (Maximum): 2nA
  • Temperature Range - Operating: -55°C to 200°C
  • Supply and Demand: Limited
  • Manufacturer Pack Quantity: 1
  • MSL Level: 1 (Unlimited)
  • Vce saturation (maximum) @ Ib, Ic: 1V @ 500μA, 10mA
  • DC Current Gain (hFE) (minimum) @ Ic, Vce: 100 @ 10μA, 5V
  • Maximum Power: 300mW

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