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MJW21194G

Part No MJW21194G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description 16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Transistor Type NPN
Current - Collector (Ic) (Maximum) 16A
Voltage - Collector Emitter Breakdown (Maximum) 250V
Vce Saturation (Maximum) @ Ib, Ic 4V @ 3.2A, 16A
Current - Collector Cutoff (Maximum) 100μA
DC Current Gain (hFE) (Minimum) @ Ic, Vce 20 @ 8A, 5V
Power - Max 200W
Frequency - Transition 4MHz
Operating Temperature Range -65°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-247-3
Manufacturer Package TO-247
Win Source Part Number 1223811-MJW21194G
Manufacturer Homepage www.onsemi.com
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management, Audio
Family Name MJW21194
Introduction Date May 15, 2001
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2023
Ultra Librarian 3D Model Ultra Librarian MJW21194G CAD Model

Description

ON Semiconductor MJW21194G Power Transistor

The ON Semiconductor MJW21194G is a high-performance power transistor designed for a wide range of applications requiring robust and reliable power handling capabilities. This silicon power transistor is part of the MJW2119x series, which is known for its high power and high-speed capabilities, making it ideal for audio power amplifiers, switch-mode power supplies, and other power control circuits.

The MJW21194G boasts a high collector-emitter voltage (VCEO) of 250V, providing ample voltage handling capacity for various electronic designs. With a continuous collector current (IC) rating of 16A, this transistor can handle significant power levels, suitable for demanding applications. Additionally, the device features a high power dissipation of 200W, ensuring reliable operation even under high load conditions.

One of the key attributes of the MJW21194G is its high gain bandwidth product (fT), which is typically 4MHz. This characteristic allows the transistor to operate efficiently at higher frequencies, making it an excellent choice for audio amplification and high-frequency switching applications. Moreover, the device exhibits a low collector-emitter saturation voltage (VCE(sat)), which enhances its efficiency by reducing power loss during operation.

ON Semiconductor has engineered the MJW21194G with a rugged design to ensure it can withstand the rigors of high-power applications. The device is encapsulated in a TO-247 package, which offers superior thermal performance and is easy to mount onto a heatsink for enhanced thermal management. This package also provides excellent isolation between the transistor and the mounting surface, further enhancing its reliability.

The MJW21194G is complemented by its PNP counterpart, the MJW21195G, allowing designers to implement complementary push-pull configurations commonly used in high-fidelity audio amplifiers. Together, these transistors provide a well-balanced solution for power amplification circuits.

With its robust performance characteristics and reliable design, the ON Semiconductor MJW21194G is a versatile component that meets the stringent requirements of power electronics engineers. Whether it's for professional audio equipment, high-power switching applications, or any other system requiring a high-quality power transistor, the MJW21194G stands out as a solid choice.

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.0559 $52.7267
31+ $3.3280 $103.1680
47+ $3.2240 $151.5280
65+ $3.1200 $202.8000
83+ $3.0160 $250.3280
111+ $2.7040 $300.1440
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Availability: 25,000 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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