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Categories Discrete Semiconductor Products
Manufacturer Microchip Technology
Packaging Bulk
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 400V
Id - Continuous Drain Current 86mA
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 25Ohm at 100mA, 10V
Gate Source Voltage(th) (Maximum) at Id 2.4V at 1mA
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 125pF at 25V
Power Dissipation (Maximum) 740mW
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-92-3
Manufacturer Package TO-226-3, TO-92-3 (TO-226AA)
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1271686-TP2540N3-G
Manufacturer Homepage www.supertex.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TP2540N3-G CAD Model

Description

Microchip Technology's TP2540N3-G High-Efficiency Power MOSFET

The TP2540N3-G is a cutting-edge Power MOSFET from Microchip Technology, designed for a variety of applications that demand high efficiency and reliability. This device is a testament to Microchip's commitment to providing advanced solutions for power management challenges across industries.

Constructed with state-of-the-art technology, the TP2540N3-G boasts impressive electrical characteristics that make it a top choice for engineers and designers. With a drain-to-source voltage (Vdss) of 30V, and a continuous drain current (Id) of 40A at 25°C, this MOSFET is capable of handling significant power without compromising performance.

One of the standout features of the TP2540N3-G is its low on-resistance (Rds(on)), which is a mere 3.5mΩ at Vgs of 10V. This low on-resistance means that the device can switch on and off with minimal power loss, making it highly efficient for applications such as DC-DC converters, motor drives, and power management systems.

The TP2540N3-G also comes in a TO-220 package, which is widely recognized for its robustness and excellent thermal properties. This package ensures that the MOSFET can dissipate heat effectively, which is crucial for maintaining stability and longevity when operating at high currents or in high-temperature environments.

Furthermore, the TP2540N3-G is designed with a fast switching speed, which is essential for reducing switching losses and improving the efficiency of power conversion systems. This makes it an ideal choice for high-frequency applications where energy efficiency is a priority.

Microchip Technology has also taken measures to ensure that the TP2540N3-G is rugged and durable. It features built-in protection against overcurrent and thermal overload, which safeguards the device and the system it is part of from potential damage due to abnormal operating conditions.

In summary, the TP2540N3-G from Microchip Technology is a high-performance Power MOSFET that combines efficiency, reliability, and durability. Whether it's for power supply designs, motor control, or any application requiring efficient power handling, this MOSFET is engineered to deliver top-notch performance and meet the stringent demands of modern electronic systems.

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