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APT33GF120B2RDQ2G

Part No APT33GF120B2RDQ2G
Manufacturer Microchip Technology
Catalog IGBTs - Single
Description IGBT 1200V 64A 357W TMAX
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Microchip Technology
Package Tube
Product Status Active
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 64 A
Current - Collector Pulsed (Icm) 75 A
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 25A
Power - Max 357 W
Switching Energy 1.315mJ (on), 1.515mJ (off)
Input Type Standard
Gate Charge 170 nC
Td (on/off) @ 25°C 14ns/185ns
Test Condition 800V, 25A, 4.3Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Base Product Number APT33GF120
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 564065-APT33GF120B2RDQ2G
Ultra Librarian 3D Model Ultra Librarian APT33GF120B2RDQ2G CAD Model

Description

Microchip Technology's APT33GF120B2RDQ2G - A Robust Power Solution

The APT33GF120B2RDQ2G is a state-of-the-art power transistor module designed and manufactured by Microchip Technology, a leader in the field of microcontroller and analog semiconductors. This product stands out for its high efficiency and reliability, making it an ideal choice for a wide range of power applications.

Key Features:

  • High Voltage Capability: With a 1200V rating, this IGBT (Insulated Gate Bipolar Transistor) module is suitable for high voltage applications, ensuring that it can handle substantial electrical loads without compromising performance.
  • Advanced Trench IGBT Technology: The APT33GF120B2RDQ2G employs advanced trench technology for IGBTs, which provides lower on-state voltage drop and minimizes switching energy, leading to better efficiency and thermal performance.
  • Low Stray Inductance: The module is designed with low stray inductance, which is critical for reducing voltage spikes during high-speed switching operations, thus improving overall system reliability.
  • Robust Thermal Management: It features an excellent thermal management system that ensures stable operation even under high temperature conditions, making it suitable for demanding environments.
  • Easy Integration: The module comes in a compact package that is easy to integrate into various electronic assemblies, providing flexibility for designers and engineers.

Applications:

The versatility of the APT33GF120B2RDQ2G allows it to be used in a variety of applications, including:

  • Motor drives and inverters
  • Power supplies for industrial equipment
  • Renewable energy systems such as solar inverters and wind turbines
  • Electric vehicles (EVs) and hybrid electric vehicles (HEVs)
  • High-power lighting systems

Microchip Technology's APT33GF120B2RDQ2G is a testament to the company's commitment to providing innovative power solutions that meet the needs of modern industry. With its robust design and cutting-edge technology, this IGBT module is set to become a fundamental component in the development of efficient and reliable power systems.

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