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APT2X30D120J

Part No APT2X30D120J
Manufacturer Microchip Technology
Catalog Diodes, Rectifiers - Arrays
Description DIODE MODULE 1.2KV 30A ISOTOP / Diode Array 2 Independent Standard 1200 V 30A Chassis Mount SOT-227-4, miniBLOC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Diodes - Rectifiers - Arrays
Manufacturer Microchip Technology
Packaging Tube
Diode Configuration 2 Independent
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) (per Diode) 30A
Voltage - Forward (Vf) (Max) @ If 2.5 V @ 30 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 370 ns
Current - Reverse Leakage @ Vr 250 µA @ 1200 V
Operating Temperature - Junction -55°C ~ 175°C
Mounting Chassis Mount
Case / Package SOT-227-4, miniBLOC
Supplier Device Package ISOTOP®
Base Product Number APT2X30
RoHS Status RoHS Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Other Part Number APT2X30D120JMI-ND,APT2X30D120JMI
Standard Package 10
Win Source Part Number 1325764-APT2X30D120J
Ultra Librarian 3D Model Ultra Librarian APT2X30D120J CAD Model

Description

The APT2X30D120J is a cutting-edge Silicon Carbide (SiC) MOSFET brought to you by Microchip Technology, a leader in the semiconductor industry. This high-performance power transistor is designed to meet the needs of modern energy-efficient power conversion systems. With its advanced SiC technology, the APT2X30D120J offers superior switching performance, higher efficiency, and greater thermal conductivity compared to traditional silicon-based MOSFETs.

Boasting a drain-to-source voltage (VDS) of 1200V and a continuous drain current (ID) of 30A at 25°C, this device is capable of handling high-power applications with ease. Its low on-resistance (RDS(on)) of just 120 mΩ minimizes conduction losses, making it an ideal choice for applications such as electric vehicles, solar inverters, and high-performance power supplies.

The APT2X30D120J's fast switching capabilities are attributed to its low internal gate resistance (RG) and reduced total gate charge (QG), which translate into reduced switching losses. This makes the MOSFET particularly suitable for high-frequency operation, where efficiency is paramount. Additionally, the inherent material properties of SiC allow the APT2X30D120J to operate at higher junction temperatures, thereby offering improved reliability and reduced cooling requirements.

The device is housed in a robust package that ensures excellent mechanical strength and thermal performance. Its easy-to-mount package simplifies the assembly process and provides a reliable electrical connection, which is crucial for maintaining performance over the product's lifespan.

Microchip Technology's APT2X30D120J is not just about raw performance; it also incorporates features to ensure safe operation. Built-in protection mechanisms such as under-voltage lockout (UVLO) and over-temperature protection contribute to the overall system safety and longevity.

In summary, the APT2X30D120J from Microchip Technology represents a leap forward in power MOSFET technology, offering unparalleled efficiency, reliability, and performance for a wide range of high-voltage applications. Its integration into your power systems can lead to significant improvements in system efficiency, thermal management, and overall performance.

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