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IXTT68P20T

Name: IXTT68P20T
Brand: IXYS
SKU: 1217486
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IXTT68P20T
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET P-CH 200V 68A TO268 / P-Channel 200 V 68A (Tc) 568W (Tc) Surface Mount TO-268AA
Datasheet	IXTT68P20T Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	IXYS
Series	TrenchP™
Package	Tube
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	68A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	55mOhm @ 34A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	380 nC @ 10 V
Vgs (Max)	±15V
Input Capacitance (Ciss) (Max) @ Vds	33400 pF @ 25 V
Power Dissipation (Max)	568W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting	SMD (SMT)
Supplier Device Package	TO-268AA
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Base Product Number	IXTT68
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	30
Win Source Part Number	1217486-IXTT68P20T
Ultra Librarian 3D Model	Ultra Librarian IXTT68P20T CAD Model

Description

The IXTT68P20T is a P-Channel TrenchP™ MOSFET manufactured by IXYS.

Voltage Rating: 200 V
Current Rating: 68 A
Power Dissipation: 568 W
Package: TO-268-3
Operating Temperature Range: -55°C to 150°C
Packaging: tube
Units per Package: 30
Popularity: balanced supply and demand
REACH: unaffected
ECCN: EAR99

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
2+	$36.0971	$72.1942
4+	$29.6181	$118.4724
6+	$28.6926	$172.1556
8+	$27.7670	$222.1360
10+	$26.8414	$268.4140
13+	$24.0647	$312.8411

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 60 pieces

MOQ: 2 pcs

Order Increment : 1 pcs

Qty:

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Shipped from	HK warehouse
Expected Shipping Date	Ship today if order in (HKT)
Supplier Lead-Time	Call for availability
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