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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 500V
Id - Continuous Drain Current 16A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 330mOhm at 8A, 10V
Gate Source Voltage(th) (Maximum) at Id 4.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 43nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 2530pF at 25V
Power Dissipation (Maximum) 300W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1191285-IXTP450P2
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXTP450P2 CAD Model

Description

The IXYS MOSFET is a high-performance N-channel transistor designed for use in a variety of applications.

  • Vds - Drain-Source Breakdown Voltage: 500V
  • Id - Continuous Drain Current: 16A
  • Rds On (Maximum) @ Id, Vgs: 330mOhm @ 8A, 10V
  • Gate Charge (Qg) (Maximum) @ Vgs: 43nC @ 10V
  • Gate Source Voltage(th) (Maximum) @ Id: 4.5V @ 250μA
  • Input Capacitance (Ciss) (Maximum) @ Vds: 2530pF @ 25V
  • Package: TO-220-3
  • Power Dissipation (Maximum): 300W
  • Operating Temperature: -55°C to 150°C
  • Pack Quantity: 50

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $14.0393 $56.1572
10+ $11.5194 $115.1940
16+ $11.1595 $178.5520
21+ $10.7995 $226.7895
27+ $10.4395 $281.8665
36+ $9.3595 $336.9420
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 160 pieces
MOQ: 4 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?
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