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Same model may have multiple batches, images only for reference.
IXTP08N100D2 Real Image
Same model may have multiple batches, images only for reference.

IXTP08N100D2

Part No IXTP08N100D2
Manufacturer IXYS
Catalog FETs - Single
Description Depletion Mode MOSFET | MOSFET N-CH 1000V 0.8A TO220AB
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 1000V
Id - Continuous Drain Current 800mA
Rds On (Maximum) at Id, Vgs 21Ohm at 400mA, 0V
Gate Charge (Qg) (Maximum) at Vgs 14.6nC at 5V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 325pF at 25V
FET Feature Depletion Mode
Power Dissipation (Maximum) 60W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1191272-IXTP08N100D2
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXTP08N100D2 CAD Model

Description

IXTP08N100D2 is an N-Channel MOSFET transistor from IXYS that operates in depletion mode.

  • Breakdown Voltage: 1000V
  • Continuous Drain Current: 800mA
  • Power Dissipation (Max): 60W
  • Package: TO-220AB
  • Manufacturer Package: TO-220-3
  • Gate-Source Voltage (Max): ±20V
  • Gate Charge (Qg) (Max): 14.6nC @ 5V
  • Input Capacitance (Ciss) (Max): 325pF @ 25V
  • Package Type: Tube
  • Mounting Style: Through-Hole

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