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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 1000V
Id - Continuous Drain Current 800mA
Rds On (Maximum) at Id, Vgs 21Ohm at 400mA, 0V
Gate Charge (Qg) (Maximum) at Vgs 14.6nC at 5V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 325pF at 25V
FET Feature Depletion Mode
Power Dissipation (Maximum) 60W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1191272-IXTP08N100D2
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXTP08N100D2 CAD Model

Description

IXTP08N100D2 is an N-Channel MOSFET transistor from IXYS that operates in depletion mode.

  • Breakdown Voltage: 1000V
  • Continuous Drain Current: 800mA
  • Power Dissipation (Max): 60W
  • Package: TO-220AB
  • Manufacturer Package: TO-220-3
  • Gate-Source Voltage (Max): ±20V
  • Gate Charge (Qg) (Max): 14.6nC @ 5V
  • Input Capacitance (Ciss) (Max): 325pF @ 25V
  • Package Type: Tube
  • Mounting Style: Through-Hole

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $7.2072 $64.8648
22+ $5.9137 $130.1014
34+ $5.7288 $194.7792
47+ $5.5440 $260.5680
61+ $5.3593 $326.9173
81+ $4.8049 $389.1969
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 25 pieces
MOQ: 9 pcs
Order Increment : 1 piece
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