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IXTH6N120

Name: IXTH6N120
Brand: IXYS
SKU: 608572
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IXTH6N120
Manufacturer	IXYS
Catalog	FETs - Single
Description	High Voltage Power MOSFET \| MOSFET N-CH 1200V 6A TO-247AD
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	IXYS
Packaging	Tube
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	1200V
Id - Continuous Drain Current	6A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	2.6Ohm at 3A, 10V
Gate Source Voltage(th) (Maximum) at Id	5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	56nC at 10V
Gate Source Voltage (Maximum)	±20V
Input Capacitance (Ciss) (Maximum) at Vds	1950pF at 25V
Power Dissipation (Maximum)	300W
Temperature Range - Operating	-55°C ~ 150°C
Mounting Style	Through Hole
Supplier Device Package	TO-247 (IXTH)
Manufacturer Package	TO-247-3
Manufacturer Pack Quantity	30
MSL Level	1 (Unlimited)
Win Source Part Number	1191260-IXTH6N120
Manufacturer Homepage	www.ixys.com
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IXTH6N120 CAD Model

Description

The IXYS MOSFET is a high-quality electronic component that is perfect for use in a variety of applications.

Vds - Drain-Source Breakdown Voltage: 1200V
Id - Continuous Drain Current: 6A
Rds On (Maximum) @ Id, Vgs: 2.6Ohm @ 3A, 10V
Gate charge (Qg) (Maximum) @ Vgs: 56nC @ 10V
Temperature Range: -55°C ~ 150°C
Power Dissipation (Maximum): 300W
Mounting Style: Through-hole
Supplier Device Package: TO-247 (IXTH)

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
3+	$21.6879	$65.0637
6+	$17.7952	$106.7712
9+	$17.2391	$155.1519
12+	$16.6830	$200.1960
16+	$16.1269	$258.0304
21+	$14.4586	$303.6306

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 100 pieces

MOQ: 3 pcs

Order Increment : 1 pcs

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Shipped from	HK warehouse
Expected Shipping Date	Ship today if order in (HKT)
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