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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 50A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 55mOhm at 25A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 140nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 4350pF at 25V
Power Dissipation (Maximum) 300W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-247 (IXTH)
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Win Source Part Number 1191259-IXTH50P10
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXTH50P10 CAD Model

Description

The IXTH50P10 MOSFET is a P-channel transistor manufactured by IXYS.

  • Maximum Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 50A
  • Maximum Power Dissipation: 300W
  • Gate-Source Voltage: ±20V
  • Package: TO-247-3
  • Drive Voltage: 10V
  • Applications: various electronic applications

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