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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 1200V
Id - Continuous Drain Current 3A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 4.5Ohm at 500mA, 10V
Gate Source Voltage(th) (Maximum) at Id 4.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 39nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1300pF at 25V
Power Dissipation (Maximum) 200W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-247 (IXTH)
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Win Source Part Number 1191255-IXTH3N120
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXTH3N120 CAD Model

Description

The IXYS MOSFET is a powerful transistor with a drain-source breakdown voltage of 1200V and continuous drain current of 3A.

  • Manufacturer: IXYS
  • Mounting Style: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • FET Feature: N-Channel
  • Gate Charge (Qg): 39nC @ 10V
  • Input Capacitance (Ciss): 1300pF @ 25V
  • Power Dissipation: 200W
  • Drive Voltage: 10V
  • Temperature Range: -55°C to 150°C
  • Pack Quantity: 30
  • MSL Level: 1 (unlimited)
  • Drain-Source Breakdown Voltage: 1200V
  • Continuous Drain Current: 3A

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