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Same model may have multiple batches, images only for reference.
IXGH24N60B Real Image
Same model may have multiple batches, images only for reference.

IXGH24N60B

Part No IXGH24N60B
Manufacturer IXYS
Catalog IGBTs - Single
Description HiPerFAST IGBT
Datasheet
IXGH24N60B Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series HiPerFAST
Packaging Bulk
Part Status Obsolete(EOL)
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 48A
Current - Collector Pulsed (Icm) 96A
Vce(on) (Maximum) @ Vge, Ic 2.3V @ 15V, 24A
Power - Max 150W
Switching Energy 600μJ (on), 800μJ (off)
Input Type Standard
Gate Charge 90nC
Td (on/off) @ 25°C 25ns/150ns
Test Condition 480V, 24A, 10 Ohm, 15V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-247-3
Manufacturer Package TO-247AD (IXGH)
Win Source Part Number 1191173-IXGH24N60B
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Family Name IXGH24N60B
Introduction Date September 21, 2000
ECCN EAR99
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian IXGH24N60B CAD Model

Description

The IXGH24N60B is a HiPerFAST series N-channel MOSFET transistor.

  • Series: HiPerFAST
  • Transistor Type: N-channel MOSFET
  • Application: discrete semiconductor products such as FETs, MOSFETs, and single FETs.
  • Package: TO-247AD (IXGH)
  • Quantity: 1 piece
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Voltage-Collector Emitter Breakdown (Maximum): 600V
  • Power (Max): 150W
  • Current-Collector (Ic) (Maximum): 48A
  • Rds On (Max) @ Id, Vgs: 33 mOhm @ 30A, 10V
  • Gate Charge (Qg): 90nC
  • Input Capacitance (Ciss): 5200pF @ 25V

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