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IXFX64N60P3

Part No IXFX64N60P3
Manufacturer IXYS
Catalog FETs - Single
Description MOSFET N-CH 600V 64A PLUS247
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 64A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 95mOhm at 32A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 4mA
Gate Charge (Qg) (Maximum) at Vgs 145nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 9900pF at 25V
Power Dissipation (Maximum) 1130W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package PLUS247-3
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Win Source Part Number 718798-IXFX64N60P3
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXFX64N60P3 CAD Model

Description

The IXYS MOSFET IXFX64N60P3 is a N-Channel MOSFET that comes with a Drive Voltage (Max Rds On, Min Rds On) of 10V.

  • Vds - Drain-Source Breakdown Voltage: 600V
  • Id - Continuous Drain Current: 64A
  • Mounting: Through Hole
  • Package: TO-247-3
  • Operating Temperature Range: -55°C ~ 150°C
  • Application: Discrete Semiconductor Products

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $24.2221 $72.6663
6+ $19.8746 $119.2476
8+ $19.2535 $154.0280
11+ $18.6324 $204.9564
14+ $18.0113 $252.1582
19+ $16.1481 $306.8139
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Availability: 3,630 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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