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IXFX24N100

Part No IXFX24N100
Manufacturer IXYS
Catalog FETs - Single
Description HiPerFETTM Power MOSFETs | MOSFET N-CH 1000V 24A PLUS 247
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 1000V
Id - Continuous Drain Current 24A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 390mOhm at 12A, 10V
Gate Source Voltage(th) (Maximum) at Id 5.5V at 8mA
Gate Charge (Qg) (Maximum) at Vgs 267nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 8700pF at 25V
Power Dissipation (Maximum) 560W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package PLUS247-3
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Win Source Part Number 1191147-IXFX24N100
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXFX24N100 CAD Model

Description

The IXFX24N100 is a MOSFET transistor manufactured by IXYS. It is designed for use in discrete semiconductor products and features an N-Channel transistor polarity.

  • Package: TO-247-3
  • Drain-Source Breakdown Voltage: 1000V
  • Continuous Drain Current: 24A
  • Maximum Power Dissipation: 560W
  • Maximum Gate-Source Voltage: ±20V
  • Input Capacitance: 8700pF @ 25V
  • Operating Temperature Range: -55°C to 150°C
  • Drive Voltage: 10V
  • Supplied Quantity: 30
  • MSL Level: 1 (Unlimited)

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.8240 $50.8320
44+ $2.3172 $101.9568
67+ $2.2448 $150.4016
93+ $2.1724 $202.0332
120+ $2.0999 $251.9880
160+ $1.8827 $301.2320
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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